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| Presentation | 2020-11-27 11:20 Improved performance in GaN-based HEMTs with insulated gate structures Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.)  ED2020-16 CPM2020-37 LQE2020-67 Link to ES Tech. Rep. Archives: ED2020-16 CPM2020-37 LQE2020-67 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS) structures over their Schottky-gate (SG) device counterparts. However, to the best of authors’ knowledge, large signal characteristics of those devices are rarely discussed or compared. In this study we have fabricated (ZrO2, SiO2) MIS and SiN passivated SG HEMTs, using Al0.25Ga0.75N/GaN epitaxially grown on semi-insulating SiC substrates. S-parameters were measured and subsequent de-embedding calculations were performed to quantify parasitic components. Alongside with small signal parameters, large signal load-pull measurements were performed. Electron mobility of gateless devices was also measured and compared. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN HEMT / MIS-HEMT / high frequency performance / s-parameters / LP measurements / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 255, CPM2020-37, pp. 60-62, Nov. 2020. | |
| Paper # | CPM2020-37 | |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2020-16 CPM2020-37 LQE2020-67 Link to ES Tech. Rep. Archives: ED2020-16 CPM2020-37 LQE2020-67 |
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| Conference Information | |
| Committee | LQE CPM ED |
| Conference Date | 2020-11-26 - 2020-11-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2020-11-LQE-CPM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improved performance in GaN-based HEMTs with insulated gate structures |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | MIS-HEMT |
| Keyword(3) | high frequency performance |
| Keyword(4) | s-parameters |
| Keyword(5) | LP measurements |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ali Baratov |
| 1st Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 2nd Author's Name | Takashi Ozawa |
| 2nd Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 3rd Author's Name | Shunpei Yamashita |
| 3rd Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 4th Author's Name | Joel T. Asubar |
| 4th Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 5th Author's Name | Hirokuni Tokuda |
| 5th Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 6th Author's Name | Masaaki Kuzuhara |
| 6th Author's Affiliation | Kwansei Gakuin University (Kwansei Gakuin Univ.) |
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| Speaker | Author-1 |
| Date Time | 2020-11-27 11:20:00 |
| Presentation Time | 20 minutes |
| Registration for | CPM |
| Paper # | ED2020-16, CPM2020-37, LQE2020-67 |
| Volume (vol) | vol.120 |
| Number (no) | no.254(ED), no.255(CPM), no.256(LQE) |
| Page | pp.60-62 |
| #Pages | 3 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
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