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Paper Abstract and Keywords
Presentation 2021-10-27 10:30
Study on the low-temperature deposition method of SiNx film for Cu-TSV
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.) CPM2021-21 Link to ES Tech. Rep. Archives: CPM2021-21
Abstract (in Japanese) (See Japanese page) 
(in English) For Cu through silicon via in the 3D-LSI, It is desired to realize a deposition method of an insulating film less than 200℃. In this study, deposition method combining reactive sputtering and radical treatment and characteristics of SiNx films of this method were examined. As a result, it was clarified that an excellent SiNx film can be obtained by the deposition method combining the reactive sputtering method and the radical treatment as compared with the usual reactive sputtering method. Therefore, a deposition method that combines a reactive sputtering method and a radical treatment may be one of the deposition methods of SiNx film for low-temperature preparation.
Keyword (in Japanese) (See Japanese page) 
(in English) 3D-LSI / through silicon via / reactive sputtering / radical treatment / low temperature deposition / SiNx film / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 220, CPM2021-21, pp. 5-7, Oct. 2021.
Paper # CPM2021-21 
Date of Issue 2021-10-20 (CPM) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2021-21 Link to ES Tech. Rep. Archives: CPM2021-21

Conference Information
Committee CPM  
Conference Date 2021-10-27 - 2021-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional materials (semiconductors, magnetic materials, dielectrics, transparent conductors / semiconductors, etc.) thin film processes / materials / devices, etc. 
Paper Information
Registration To CPM 
Conference Code 2021-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study on the low-temperature deposition method of SiNx film for Cu-TSV 
Sub Title (in English)  
Keyword(1) 3D-LSI  
Keyword(2) through silicon via  
Keyword(3) reactive sputtering  
Keyword(4) radical treatment  
Keyword(5) low temperature deposition  
Keyword(6) SiNx film  
Keyword(7)  
Keyword(8)  
1st Author's Name Masaru Sato  
1st Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
2nd Author's Name Mayumi B. Takeyama  
2nd Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
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Speaker Author-1 
Date Time 2021-10-27 10:30:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2021-21 
Volume (vol) vol.121 
Number (no) no.220 
Page pp.5-7 
#Pages
Date of Issue 2021-10-20 (CPM) 


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