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Paper Abstract and Keywords
Presentation 2021-11-26 13:00
Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy
Kenji Shiojima (Univ. of Fukui), Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Edo Masaharu (Fuji electric co.) ED2021-28 CPM2021-62 LQE2021-40
Abstract (in Japanese) (See Japanese page) 
(in English) We report the basic electrical characteristics and uniformity of 25 Au/Ni Schottky barrier diodes (SBDs) with three different surface treatments ((I) no treatment (as-grown), (II) alkaline solution, and (III) HCl related solution). The SBDs with (II) showed small diode-to-diode variation in the Schottky barrier height and the ideality factor, and good uniformity over the electrode. In addition, after post-metallization annealing at 400 °C, the reverse biased current significantly reduced to the prediction by the thermionic field emission model. The similar characteristics were obtained for the SBDs with (I), however the uniformity over the electrode became worse after the annealing. For the SBDs with (III), the diode-to-diode variation was originally large, and the reverse biased current did not significantly reduce.
Keyword (in Japanese) (See Japanese page) 
(in English) Schottky contacts / GaN / surface treatment / post-metallization annealing / scanning internal photoemission microscopy / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 259, ED2021-28, pp. 63-66, Nov. 2021.
Paper # ED2021-28 
Date of Issue 2021-11-18 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2021-28 CPM2021-62 LQE2021-40

Conference Information
Committee ED CPM LQE  
Conference Date 2021-11-25 - 2021-11-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2021-11-ED-CPM-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy 
Sub Title (in English)  
Keyword(1) Schottky contacts  
Keyword(2) GaN  
Keyword(3) surface treatment  
Keyword(4) post-metallization annealing  
Keyword(5) scanning internal photoemission microscopy  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kenji Shiojima  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Ryo Tanaka  
2nd Author's Affiliation Fuji electric corporation (Fuji electric co.)
3rd Author's Name Shinya Takashima  
3rd Author's Affiliation Fuji electric corporation (Fuji electric co.)
4th Author's Name Katsunori Ueno  
4th Author's Affiliation Fuji electric corporation (Fuji electric co.)
5th Author's Name Edo Masaharu  
5th Author's Affiliation Fuji electric corporation (Fuji electric co.)
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Speaker Author-1 
Date Time 2021-11-26 13:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2021-28, CPM2021-62, LQE2021-40 
Volume (vol) vol.121 
Number (no) no.259(ED), no.260(CPM), no.261(LQE) 
Page pp.63-66 
#Pages 4 
Date of Issue 2021-11-18 (ED, CPM, LQE) 

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