Paper Abstract and Keywords |
Presentation |
2021-11-26 13:00
Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy Kenji Shiojima (Univ. of Fukui), Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Edo Masaharu (Fuji electric co.) ED2021-28 CPM2021-62 LQE2021-40 Link to ES Tech. Rep. Archives: ED2021-28 CPM2021-62 LQE2021-40 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report the basic electrical characteristics and uniformity of 25 Au/Ni Schottky barrier diodes (SBDs) with three different surface treatments ((I) no treatment (as-grown), (II) alkaline solution, and (III) HCl related solution). The SBDs with (II) showed small diode-to-diode variation in the Schottky barrier height and the ideality factor, and good uniformity over the electrode. In addition, after post-metallization annealing at 400 °C, the reverse biased current significantly reduced to the prediction by the thermionic field emission model. The similar characteristics were obtained for the SBDs with (I), however the uniformity over the electrode became worse after the annealing. For the SBDs with (III), the diode-to-diode variation was originally large, and the reverse biased current did not significantly reduce. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Schottky contacts / GaN / surface treatment / post-metallization annealing / scanning internal photoemission microscopy / / / |
Reference Info. |
IEICE Tech. Rep., vol. 121, no. 259, ED2021-28, pp. 63-66, Nov. 2021. |
Paper # |
ED2021-28 |
Date of Issue |
2021-11-18 (ED, CPM, LQE) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2021-28 CPM2021-62 LQE2021-40 Link to ES Tech. Rep. Archives: ED2021-28 CPM2021-62 LQE2021-40 |
Conference Information |
Committee |
ED CPM LQE |
Conference Date |
2021-11-25 - 2021-11-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ED |
Conference Code |
2021-11-ED-CPM-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy |
Sub Title (in English) |
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Keyword(1) |
Schottky contacts |
Keyword(2) |
GaN |
Keyword(3) |
surface treatment |
Keyword(4) |
post-metallization annealing |
Keyword(5) |
scanning internal photoemission microscopy |
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1st Author's Name |
Kenji Shiojima |
1st Author's Affiliation |
University of Fukui (Univ. of Fukui) |
2nd Author's Name |
Ryo Tanaka |
2nd Author's Affiliation |
Fuji electric corporation (Fuji electric co.) |
3rd Author's Name |
Shinya Takashima |
3rd Author's Affiliation |
Fuji electric corporation (Fuji electric co.) |
4th Author's Name |
Katsunori Ueno |
4th Author's Affiliation |
Fuji electric corporation (Fuji electric co.) |
5th Author's Name |
Edo Masaharu |
5th Author's Affiliation |
Fuji electric corporation (Fuji electric co.) |
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Speaker |
Author-1 |
Date Time |
2021-11-26 13:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2021-28, CPM2021-62, LQE2021-40 |
Volume (vol) |
vol.121 |
Number (no) |
no.259(ED), no.260(CPM), no.261(LQE) |
Page |
pp.63-66 |
#Pages |
4 |
Date of Issue |
2021-11-18 (ED, CPM, LQE) |
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