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Paper Abstract and Keywords
Presentation 2022-03-07 14:30
MTJ-based non-volatile SRAM circuit with Approximate Image-data Storing for energy saving
Hisato Miyauchi, Kimiyoshi Usami (SIT) VLD2021-86 HWS2021-63
Abstract (in Japanese) (See Japanese page) 
(in English) Non-volatile memory (NVM) using magnetic tunnel junction (MTJ) devices can prevent the increase in leakage current, which has become a problem in recent years, because it allows fine-grained power supply interruption. However, MTJ has a problem of large store energy. In this study, we propose an NVSRAM that achieves low energy consumption by applying Approximate Storing, which divides the data bit strings and reduces the store time in the parts that do not require accurate store. The energy reduction during image storage was evaluated by simulation in the 65nm process.
Keyword (in Japanese) (See Japanese page) 
(in English) SRAM / Power-Gating / MTJ / Approximate Computing / / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 412, VLD2021-86, pp. 51-56, March 2022.
Paper # VLD2021-86 
Date of Issue 2022-02-28 (VLD, HWS) 
ISSN Online edition: ISSN 2432-6380
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Download PDF VLD2021-86 HWS2021-63

Conference Information
Committee VLD HWS  
Conference Date 2022-03-07 - 2022-03-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Design Technology for System-on-Silicon, Hardware Security, etc. 
Paper Information
Registration To VLD 
Conference Code 2022-03-VLD-HWS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) MTJ-based non-volatile SRAM circuit with Approximate Image-data Storing for energy saving 
Sub Title (in English)  
Keyword(1) SRAM  
Keyword(2) Power-Gating  
Keyword(3) MTJ  
Keyword(4) Approximate Computing  
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1st Author's Name Hisato Miyauchi  
1st Author's Affiliation Shibaura Institute of Technology (SIT)
2nd Author's Name Kimiyoshi Usami  
2nd Author's Affiliation Shibaura Institute of Technology (SIT)
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Speaker Author-1 
Date Time 2022-03-07 14:30:00 
Presentation Time 25 minutes 
Registration for VLD 
Paper # VLD2021-86, HWS2021-63 
Volume (vol) vol.121 
Number (no) no.412(VLD), no.413(HWS) 
Page pp.51-56 
#Pages
Date of Issue 2022-02-28 (VLD, HWS) 


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