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Paper Abstract and Keywords
Presentation 2023-08-01 10:05
Evaluation of the Physical Properties of Reactive sputtered Ti or V-based MAX alloy thin film
Kazuki Ueda, Kazunobu Wkamatsu, Takeyasu Saito, Naoki Okamoto (Osaka Metropolitan Univ.) CPM2023-20
Abstract (in Japanese) (See Japanese page) 
(in English) Currently, Cu is the main wiring material in leading-edge semiconductor devices. However, since Cu easily diffuses into Si and the interlayer dielectric film and degrades electrical characteristics, a diffusion barrier film is necessary. MAX Phases (M: an early transition metal, A: group 13 to 16 elements, X: carbon or nitrogen, n = 1 to 3) are attracting attention as a new wiring material because they do not require a diffusion barrier film and have low resistivity in narrow wiring. In this study, the ratios of M and A elements on the sputtering target carbon disk were changed for M = Ti and V-based MAX phases, and (Ti or V)-(Si or Al or Ge)-C thin films were fabricated to investigate the effects of target composition in detail. After preparation, the film orientation, surface morphology, and resistance were investigated. The TiSiC film fabricated at a substrate temperature of 800°C yielded 22 Omega, and the TiGeC film fabricated at 400°C yielded 1234 μOmegacdotcm, with lower resistivity achieved with Ti for the M element and Ge for the A element.
Keyword (in Japanese) (See Japanese page) 
(in English) sputtering / MAX Phases / interconnect resistance / / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 142, CPM2023-20, pp. 33-35, July 2023.
Paper # CPM2023-20 
Date of Issue 2023-07-24 (CPM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2023-07-31 - 2023-08-01 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2023-07-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of the Physical Properties of Reactive sputtered Ti or V-based MAX alloy thin film 
Sub Title (in English)  
Keyword(1) sputtering  
Keyword(2) MAX Phases  
Keyword(3) interconnect resistance  
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1st Author's Name Kazuki Ueda  
1st Author's Affiliation Osaka Metropolitan University (Osaka Metropolitan Univ.)
2nd Author's Name Kazunobu Wkamatsu  
2nd Author's Affiliation Osaka Metropolitan University (Osaka Metropolitan Univ.)
3rd Author's Name Takeyasu Saito  
3rd Author's Affiliation Osaka Metropolitan University (Osaka Metropolitan Univ.)
4th Author's Name Naoki Okamoto  
4th Author's Affiliation Osaka Metropolitan University (Osaka Metropolitan Univ.)
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Speaker Author-1 
Date Time 2023-08-01 10:05:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2023-20 
Volume (vol) vol.123 
Number (no) no.142 
Page pp.33-35 
#Pages 3 
Date of Issue 2023-07-24 (CPM) 

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