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Paper Abstract and Keywords
Presentation 2023-08-01 09:45
Fabrication of SiC/AlN multilayer structure on 3°off-axis Si(110) substrate and graphene formation thereon
Ryosuke Saito, Yuki Nara, Daiki Kasai, Haruto Koriyama, Yoshiharu Enta, Hideki Nakazawa (Hirosaki Univ.) CPM2023-19
Abstract (in Japanese) (See Japanese page) 
(in English) We have grown aluminum nitride (AlN) films on 3 ̊off-axis Si(110) substrates by pulsed laser deposition (PLD) and formed SiC low-temperature buffer layers on the AlN layers by ultralow pressure chemical vapor deposition using monomethylsilane (MMS; CH3SiH3) to grow SiC films on the buffer layers by PLD. We optimized the substrate temperature and MMS pressure for formation of the buffer layers to improve the crystallinity and surface roughness of the SiC films. Furthermore, graphene was formed on the SiC films on the buffer layers formed under the optimized conditions by high- temperature annealing in vacuum. X-ray photoelectron spectroscopy and Raman spectroscopy were used to evaluate the crystallinity and determine the number of layers of graphene. Annealing at 1200 ̊C for 30 min resulted in the formation of 4-5 layers of graphene. It was found that employing the SiC buffer layer formed under the optimized conditions increased the growth rate of graphene, which was much higher than those of graphene on Si(110) substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) Graphene / Silicon carbide / Aluminum nitride / Pulsed laser deposition / Heteroepitaxy / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 142, CPM2023-19, pp. 29-32, July 2023.
Paper # CPM2023-19 
Date of Issue 2023-07-24 (CPM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2023-07-31 - 2023-08-01 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2023-07-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of SiC/AlN multilayer structure on 3°off-axis Si(110) substrate and graphene formation thereon 
Sub Title (in English)  
Keyword(1) Graphene  
Keyword(2) Silicon carbide  
Keyword(3) Aluminum nitride  
Keyword(4) Pulsed laser deposition  
Keyword(5) Heteroepitaxy  
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Keyword(7)  
Keyword(8)  
1st Author's Name Ryosuke Saito  
1st Author's Affiliation Hirosaki University (Hirosaki Univ.)
2nd Author's Name Yuki Nara  
2nd Author's Affiliation Hirosaki University (Hirosaki Univ.)
3rd Author's Name Daiki Kasai  
3rd Author's Affiliation Hirosaki University (Hirosaki Univ.)
4th Author's Name Haruto Koriyama  
4th Author's Affiliation Hirosaki University (Hirosaki Univ.)
5th Author's Name Yoshiharu Enta  
5th Author's Affiliation Hirosaki University (Hirosaki Univ.)
6th Author's Name Hideki Nakazawa  
6th Author's Affiliation Hirosaki University (Hirosaki Univ.)
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Speaker Author-1 
Date Time 2023-08-01 09:45:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2023-19 
Volume (vol) vol.123 
Number (no) no.142 
Page pp.29-32 
#Pages 4 
Date of Issue 2023-07-24 (CPM) 

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