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Paper Abstract and Keywords
Presentation 2024-02-29 10:45
Fabrication and Evaluation of Aluminum Nitride Thin Film Using Microwave Plasma-Assisted Low-Temperature Atomic Layer Deposition
Tomoya Takahashi, Masanori Miura, Bashir Ahmmad, Fumihiko Hirose (Yamagata Univ.) CPM2023-99
Abstract (in Japanese) (See Japanese page) 
(in English) Aluminum nitride is expected to be used as a passivation film for devices due to its wide band gap and stability to water and oxygen. In this experiment, we investigated the optimum conditions for the deposition of aluminum nitride films by atomic layer deposition using microwave plasma and succeeded in the deposition of aluminum nitride films with about 80% of nitrogen and aluminum content. We also confirmed the transition of the composition ratio inside the film by etching for a long time, measured the film growth rate by spectroscopic ellipsometry, observed the surface structure by atomic force microscopy, and confirmed the crystallinity by X-ray diffraction.
Keyword (in Japanese) (See Japanese page) 
(in English) Atomic layer deposition / microwave / aluminum nitride / / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 395, CPM2023-99, pp. 11-14, Feb. 2024.
Paper # CPM2023-99 
Date of Issue 2024-02-22 (CPM) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2024-02-29 - 2024-02-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Yamagata University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2024-02-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and Evaluation of Aluminum Nitride Thin Film Using Microwave Plasma-Assisted Low-Temperature Atomic Layer Deposition 
Sub Title (in English)  
Keyword(1) Atomic layer deposition  
Keyword(2) microwave  
Keyword(3) aluminum nitride  
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1st Author's Name Tomoya Takahashi  
1st Author's Affiliation Yamagata University (Yamagata Univ.)
2nd Author's Name Masanori Miura  
2nd Author's Affiliation Yamagata University (Yamagata Univ.)
3rd Author's Name Bashir Ahmmad  
3rd Author's Affiliation Yamagata University (Yamagata Univ.)
4th Author's Name Fumihiko Hirose  
4th Author's Affiliation Yamagata University (Yamagata Univ.)
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Speaker Author-1 
Date Time 2024-02-29 10:45:00 
Presentation Time 15 minutes 
Registration for CPM 
Paper # CPM2023-99 
Volume (vol) vol.123 
Number (no) no.395 
Page pp.11-14 
#Pages
Date of Issue 2024-02-22 (CPM) 


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