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Technical Committee on Lasers and Quantum Electronics (LQE) (Searched in: 2015)
Search Results: Keywords 'from:2015-11-26 to:2015-11-26'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2015-11-26 10:30 |
Osaka | Osaka City University Media Center | Study on AlGaN formation on alpha-(AlGa)2O3 by surface nitridation using radio frequency nitrogen plasma Tsutomu Araki, Akira Buma, Nao Masuda, Yasushi Nanishi (Ritsumeikan Univ.), Masaya Oda, Toshimi Hitora (FLOSFIA)  ED2015-68 CPM2015-103 LQE2015-100 |
[more] | ED2015-68 CPM2015-103 LQE2015-100 pp.1-4 |
| ED, LQE, CPM | 2015-11-26 10:55 |
Osaka | Osaka City University Media Center | Growth of AlN with annealing on different misoriented c-plane sapphire Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2015-69 CPM2015-104 LQE2015-101 |
AlN is promising for applications in the deep ultraviolet region because of its wide direct band-gap and excellent therm... [more] | ED2015-69 CPM2015-104 LQE2015-101 pp.5-9 |
| ED, LQE, CPM | 2015-11-26 11:20 |
Osaka | Osaka City University Media Center | AlN growth on AlN/Sapphire substrate by RF-HVPE Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Motoaki Iwaya, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2015-70 CPM2015-105 LQE2015-102 |
AlN (Aluminum nitride) is promising for deep ultraviolet optoelectronic devices. High crystal quality free-standing AlN ... [more] | ED2015-70 CPM2015-105 LQE2015-102 pp.11-14 |
| ED, LQE, CPM | 2015-11-26 11:45 |
Osaka | Osaka City University Media Center | Electronic and optical characteristics of an m-plane freestanding GaN substrate grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method using an acidic mineralizer Kazunobu Kojima (Tohoku Univ.), Yusuke Tsukada (MCC), Erika Furukawa, Makoto Saito (Tohoku Univ.), Yutaka Mikawa, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito (MCC), Akira Uedono (Tsukuba Univ.), Shigefusa F. Chichibu (Tohoku Univ.) ED2015-71 CPM2015-106 LQE2015-103 |
[more] | ED2015-71 CPM2015-106 LQE2015-103 pp.15-19 |
| ED, LQE, CPM | 2015-11-26 13:10 |
Osaka | Osaka City University Media Center | Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements Masahiro Horita (Kyoto Univ.), Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo (Fuji Electric), Jun Suda (Kyoto Univ.) ED2015-72 CPM2015-107 LQE2015-104 |
Lightly-Mg-doped p-type gallium nitride (GaN) with the Mg concentration of $6.5times 10^{16}~mbox{cm}^{-3}$ was characte... [more] | ED2015-72 CPM2015-107 LQE2015-104 pp.21-25 |
| ED, LQE, CPM | 2015-11-26 13:35 |
Osaka | Osaka City University Media Center | Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-73 CPM2015-108 LQE2015-105 |
[more] | ED2015-73 CPM2015-108 LQE2015-105 pp.27-32 |
| ED, LQE, CPM | 2015-11-26 14:00 |
Osaka | Osaka City University Media Center | Photoresponse of Homoepitaxial N-type GaN Schottky Barrier Diodes Takuya Maeda (Kyoto Univ.), Masaya Okada (Sumitomo electric industries,Ltd.), Yoshiyuki Yamamoto, Masaki Ueno (Sumitomo electric industries), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-74 CPM2015-109 LQE2015-106 |
[more] | ED2015-74 CPM2015-109 LQE2015-106 pp.33-37 |
| ED, LQE, CPM | 2015-11-26 14:25 |
Osaka | Osaka City University Media Center | A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD) Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2015-75 CPM2015-110 LQE2015-107 |
A GaN-based trench hybrid-junction diode (THD) on a GaN substrate with a high current and low threshold voltage is prese... [more] | ED2015-75 CPM2015-110 LQE2015-107 pp.39-42 |
| ED, LQE, CPM | 2015-11-26 15:05 |
Osaka | Osaka City University Media Center | [Invited Talk]
Spatio-time-resolved cathodoluminescence studies on Si-doped high AlN mole fraction AlxGa1-xN multiple quantum wells grown on an AlN epitaxial templates Shigefusa Chichibu (Tohoku U.), Hifdeto Miyake, Kazumasa Hiramatsu (Mie-U) ED2015-76 CPM2015-111 LQE2015-108 |
[more] | ED2015-76 CPM2015-111 LQE2015-108 pp.43-48 |
| ED, LQE, CPM | 2015-11-26 15:30 |
Osaka | Osaka City University Media Center | Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements Kohei Kawakami, Takashi Nakano, Atsushi A Yamaguchi (KIT) ED2015-77 CPM2015-112 LQE2015-109 |
Radiative and non-radiative recombination lifetimes in III-nitride semiconductors are usually estimated from time-resolv... [more] | ED2015-77 CPM2015-112 LQE2015-109 pp.49-52 |
| ED, LQE, CPM | 2015-11-26 15:55 |
Osaka | Osaka City University Media Center | Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals Takashi Nakano, Kouhei Kawakami, Atsushi A. Yamaguchi (KIT) ED2015-78 CPM2015-113 LQE2015-110 |
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity b... [more] | ED2015-78 CPM2015-113 LQE2015-110 pp.53-58 |
| ED, LQE, CPM | 2015-11-26 16:30 |
Osaka | Osaka City University Media Center | Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers Ryosuke Ishido, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2015-79 CPM2015-114 LQE2015-111 |
Resonant Raman scattering spectroscopy is crucially useful in studying properties of light-emitting devices. However, it... [more] | ED2015-79 CPM2015-114 LQE2015-111 pp.59-62 |
| ED, LQE, CPM | 2015-11-26 16:55 |
Osaka | Osaka City University Media Center | Plasmonics with Aluminum applied to emission enhancements Koichi Okamoto, Kazutaka Tateishi, Shun Kawamoto, Haruku Nishida, Kaoru Tamada (Kyushu Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2015-80 CPM2015-115 LQE2015-112 |
The use of “Plasmonics” is one very promising method to improve the emission efficiencies of light-emitting diodes (LEDs... [more] | ED2015-80 CPM2015-115 LQE2015-112 pp.63-68 |
| ED, LQE, CPM | 2015-11-27 10:00 |
Osaka | Osaka City University Media Center | Behavior of Plasma-induced Defects in GaN
-- Comparison between n- and p type GaN -- Yusuke Koga, Seiji Nakamura, Tsugunori Okumura (TMU) |
[more] | |
| ED, LQE, CPM | 2015-11-27 10:25 |
Osaka | Osaka City University Media Center | Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source P.Pungboon Pansila, Kensaku Kanomata, Bashir Ahammad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ) ED2015-81 CPM2015-116 LQE2015-113 |
Temperature-controlled ALD of GaN on Si(100) is demonstrated with TMG and plasma-excited NH3. The TMG adsorption and its... [more] | ED2015-81 CPM2015-116 LQE2015-113 pp.69-72 |
| ED, LQE, CPM | 2015-11-27 10:50 |
Osaka | Osaka City University Media Center | Interface analysis of Ti/Al-based ohmic contact on AlGaN/GaN structure grown on GaN substrate Dariush H. Zadeh, Tanabe Shinichi, Watanabe Noriyuki, Matsuzaki Hideaki (NTT) |
[more] | |
| ED, LQE, CPM | 2015-11-27 11:15 |
Osaka | Osaka City University Media Center | Interface states and device characteristics of AlGaN/GaN MIS-HEMTs with HfO2 fabricated by atomic layer deposition Gosuke Nishino, Toshiharu Kubo, Takashi Egawa (NITech) ED2015-82 CPM2015-117 LQE2015-114 |
We previously reported that MIS-HEMTs with Al2O3 fabricated by ALD using both H2O and O3 as oxygen precursors showed goo... [more] | ED2015-82 CPM2015-117 LQE2015-114 pp.73-76 |
| ED, LQE, CPM | 2015-11-27 11:40 |
Osaka | Osaka City University Media Center | Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech) ED2015-83 CPM2015-118 LQE2015-115 |
In this study, two types of single AlN on Si substrates were grown using different growth conditions. A scanning electro... [more] | ED2015-83 CPM2015-118 LQE2015-115 pp.77-80 |
| ED, LQE, CPM | 2015-11-27 13:05 |
Osaka | Osaka City University Media Center | Recent progress of GaN-based Terahertz Quantum Cascade Lasers Wataru Terashima, Hideki Hirayama (RIKEN) ED2015-84 CPM2015-119 LQE2015-116 |
[more] | ED2015-84 CPM2015-119 LQE2015-116 pp.81-84 |
| ED, LQE, CPM | 2015-11-27 13:30 |
Osaka | Osaka City University Media Center | High-temperature growth of a-AlGaN/AlN and its optical properties Masafumi Jo, Hideki Hirayama (RIKEN) ED2015-85 CPM2015-120 LQE2015-117 |
[more] | ED2015-85 CPM2015-120 LQE2015-117 pp.85-88 |
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