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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2017)

Search Results: Keywords 'from:2017-06-20 to:2017-06-20'

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Search Results: Conference Papers

Conference Papers (Available on Advance Programs) (Sort by: Date Ascending)

Committee	Date Time	Place		Paper Title / Authors	Abstract	Paper #
SDM	2017-06-20 13:00	Tokyo	Campus Innovation Center Tokyo	[Invited Lecture] Scintillators and Ga2O3 Semiconductors Go Okada, Yuki Usui, Naoki Kawano, Noriaki Kawaguchi, Takayuki Yanagida (NAIST) SDM2017-21	With the recent advancement of radiation-detection technologies, the demands of higher performances of scintillators are... [more]	SDM2017-21 pp.1-4
SDM	2017-06-20 13:20	Tokyo	Campus Innovation Center Tokyo	[Invited Lecture] Development of Quantum Imaging Detector using SOI Technology -- Looking Elementary Particles and X-rays with Semiconductor -- Yasuo Arai (KEK) SDM2017-22	Silicon is a good material for detecting quantum beam (Photon, X-ray, Gamma-ray, Electron, Ion, Neutron etc.) and also g... [more]	SDM2017-22 pp.5-8
SDM	2017-06-20 13:40	Tokyo	Campus Innovation Center Tokyo	[Invited Lecture] Studies on semiconducting gas sensors with WO3 nanoparticles for skin-emitted acetone detection Yuki Yamada, Satoshi Hiyama (NTT DOCOMO), Hitoshi Tabata (Univ. of Tokyo) SDM2017-23	(To be available after the conference date) [more]	SDM2017-23 pp.9-13
SDM	2017-06-20 14:00	Tokyo	Campus Innovation Center Tokyo	[Invited Lecture] Sensing technologies using nitrogen-vacancy centers in diamond Takayuki Iwasaki, Mutsuko Hatano (Tokyo Inst. of Tech.) SDM2017-24	[more]	SDM2017-24 pp.15-18
SDM	2017-06-20 14:35	Tokyo	Campus Innovation Center Tokyo	Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-25	[more]	SDM2017-25 pp.19-23
SDM	2017-06-20 14:55	Tokyo	Campus Innovation Center Tokyo	Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application Akio Ohta, Yusuke Kato, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-26	[more]	SDM2017-26 pp.25-29
SDM	2017-06-20 15:15	Tokyo	Campus Innovation Center Tokyo	Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.) SDM2017-27	[more]	SDM2017-27 pp.31-34
SDM	2017-06-20 15:35	Tokyo	Campus Innovation Center Tokyo	Heavily-doped SOI Substrate and Transfer Printing for Fabrication of TMDC FETs Takamasa Kawanago, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda (Tokyo Inst. of Tech.) SDM2017-28	[more]	SDM2017-28 pp.35-38
SDM	2017-06-20 16:10	Tokyo	Campus Innovation Center Tokyo	Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization Kentaro Matsuura, Takumi Ohashi, Iriya Muneta (Tokyo Tech), Seiya Ishihara (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech)	[more]
SDM	2017-06-20 16:30	Tokyo	Campus Innovation Center Tokyo	Characterization of defects in Ge1-xSnx gate stack structure Yuichi Kaneda, Shinnichi ike, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2017-29	(To be available after the conference date) [more]	SDM2017-29 pp.39-42
SDM	2017-06-20 16:50	Tokyo	Campus Innovation Center Tokyo	Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-30	Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of... [more]	SDM2017-30 pp.43-48

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