|
|
| Chair |
|
Masaaki Kuzuhara (Univ. of Fukui) |
| Vice Chair |
|
Tamotsu Hashidume (Hokkaido Univ.) |
| Secretary |
|
Koichi Murata (NTT) |
| Assistant |
|
Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba) |
|
|
|
| Chair |
|
Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
| Vice Chair |
|
Toshihiro Sugii (Fujitsu Microelectronics) |
| Secretary |
|
Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) |
| Assistant |
|
Syunichiro Ohmi (Tokyo Inst. of Tech.) |
|
| Conference Date |
Thu, Feb 26, 2009 13:30 - 17:20
Fri, Feb 27, 2009 09:00 - 12:10 |
| Topics |
Functional nanodevices and related technologies |
| Conference Place |
Hyakunen-Kinenkaikan, Hokkaido University |
| Address |
Nishi 6, Kita 9, Kita-ku, Sapporo, 060-0809 Japan. |
| Transportation Guide |
10 minutes walk from JR Sapporo Station
http://www.hokudai.ac.jp/en/pickup/accesstocampus.html |
Contact
Person |
Prof. Seiya Kasai
+81-11-706-6509 or -7171 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Feb 26 PM
13:30 - 17:20 |
| (1) |
13:30-14:10 |
[Invited Talk]
Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices  ED2008-224 SDM2008-216 |
Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu) |
| (2) |
14:10-14:35 |
Magnetic properties of Mn-implanyed SOI layers ED2008-225 SDM2008-217 |
Ｙａｓｕａｋｉ Miyazaki (NTT/Keio Univ.), Yukinori Ono, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara (NTT), Eiji Ohta (Keio Univ.) |
| (3) |
14:35-15:00 |
Fabrication and application for Spin injection with Magnetite/InAs heterostructure ED2008-226 SDM2008-218 |
Takeshi Ejiri, J. Bubesh Babu, Kanji Yoh (Hokkaido Univ.) |
| (4) |
15:00-15:25 |
Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy ED2008-227 SDM2008-219 |
Yusuke Kitauchi, Junichi Motohisa, Yasunori Kobayashi, Takashi Fukui (Hokkaido Univ.) |
| |
15:25-15:40 |
Break ( 15 min. ) |
| (5) |
15:40-16:05 |
Feild Emitter Arrays with focusing function and it's applications ED2008-228 SDM2008-220 |
Yoichiro Neo, Masafumi Takeda, Tomoya Tagami, Syun Horie, Toru Aoki, Hidenori Mimura (Shizuoka Univ.), Tomoya Yoshida, Masayoshi Nagao, Seigo Kanemaru (National Inst.of Adv Ind Scie and Tech.) |
| (6) |
16:05-16:30 |
Characteristics of Single Electron Transistor and Turnstile with Input Discretizer ED2008-229 SDM2008-221 |
Masashi Takiguchi, Shota Hayami, Masaki Otsuka, Akio Kawai, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (The Univ of Electro-Communication) |
| (7) |
16:30-16:55 |
Ultrahigh-Speed Comparator with Resonant-Tunneling Diodes ED2008-230 SDM2008-222 |
Tomohiko Ebata, Uichiro Ohmae, Kazuya Machida, Takao Waho (Sophia Univ.) |
| (8) |
16:55-17:20 |
RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate ED2008-231 SDM2008-223 |
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals Co., Ltd.,) |
Fri, Feb 27 AM
09:00 - 12:10 |
| (9) |
09:00-09:25 |
Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration ED2008-232 SDM2008-224 |
Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) |
| (10) |
09:25-09:50 |
Dual-dot single-electron transistor fabricated in silicon nanowire ED2008-233 SDM2008-225 |
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) |
| (11) |
09:50-10:15 |
Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain ED2008-234 SDM2008-226 |
YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) |
| (12) |
10:15-10:40 |
Characterization and Analysis on Operation of GaAs Three-Branch Nanowire Junction Devices ED2008-235 SDM2008-227 |
Daisuke Nakata, Shaharin Fadzli Abd Rahman, Yuta Shiratori (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ/PRESTO,JST) |
| |
10:40-10:55 |
Break ( 15 min. ) |
| (13) |
10:55-11:20 |
The fourth passive circuit element relating magnetic flux to charge ED2008-236 SDM2008-228 |
Yoshihito Amemiya, Yasuo Takahashi (Hokkaido Univ.) |
| (14) |
11:20-11:45 |
Observation of Stochastic Resonance in Nanodevice-integrated Systems Utilizing GaAs-based Nanowire Network and Its Analysis ED2008-237 SDM2008-229 |
Seiya Kasai (Hokkaido Univ/JST), Tetsuya Asai, Yuta Shiratori, Hong-Quan Zhao (Hokkaido Univ.) |
| (15) |
11:45-12:10 |
Thermoelectric characteristics of Si nanostructures for a high-efficiency thermoelectric device ED2008-238 SDM2008-230 |
Hiroya Ikeda, Faiz Salleh, Kiyosumi Asai, Akihiro Ishida (Shizuoka Univ.) |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E- ：     aecl  
Hara Naoki （Fujitsu Lab.）
TEL : 046-250-8242、FAX : 046-250-8168
E- :   o     
Kunio Tsuda（Toshiba）
TEL : 044-549-2142、FAX : 044-520-1501
E- :   o   ba |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E- ge   ba |
Last modified: 2008-12-16 16:16:50
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