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| Chair |
|
Yasuo Nara |
| Vice Chair |
|
Yuzou Oono (Univ. of Tsukuba) |
| Secretary |
|
Yoshitaka Sasago (Hitachi) |
| Assistant |
|
Rihito Kuroda (Tohoku Univ.) |
|
| Conference Date |
Thu, Nov 14, 2013 10:00 - 16:40
Fri, Nov 15, 2013 10:00 - 15:50 |
| Topics |
Process, Device, Circuit Simulations, etc. |
| Conference Place |
|
| Transportation Guide |
http://www.jspmi.or.jp/kaigishitsu/ |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Nov 14 AM
10:00 - 11:35 |
| |
10:00-10:05 |
Opening Address ( 5 min. ) |
| (1) |
10:05-10:50 |
[Invited Talk]
2013 SISPAD Review
-- transport and reliability --  SDM2013-99 |
Nobuya Mori (Osaka Univ.) |
| (2) |
10:50-11:35 |
[Invited Talk]
2013 SISPAD Review
-- Workshop 1 -- SDM2013-100 |
Masashi Uematsu (Keio Univ.) |
| |
11:35-13:00 |
Lunch ( 85 min. ) |
Thu, Nov 14 PM
13:00 - 14:40 |
| (3) |
13:00-13:50 |
[Invited Talk]
Role of Computational Sciences in Design of Modern Electron Devices SDM2013-101 |
Kenji Shiraishi (Nagoya Univ.) |
| (4) |
13:50-14:15 |
Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing SDM2013-102 |
Takahisa Kanemura, Koichi Kato, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) |
| (5) |
14:15-14:40 |
The effect of incorporated elements in nitrogen vacancies on electron trap level in silicon nitride SDM2013-103 |
Kenichiro Sonoda, Eiji Tsukuda, Motoaki Tanizawa, Kiyoshi Ishikawa, Yasuo Yamaguchi (Renesas Electronics) |
| |
14:40-15:00 |
Break ( 20 min. ) |
Thu, Nov 14 PM
15:00 - 16:40 |
| (6) |
15:00-15:50 |
[Invited Talk]
Analysis of Low-Frequency Noise in Silicon Tri-Gate Nanowire Transistors SDM2013-104 |
Masumi Saitoh, Kensuke Ota, Chika Tanaka, Toshinori Numata (Toshiba) |
| (7) |
15:50-16:40 |
[Invited Talk]
Advanced MOSFET simulations using a quantum energy trasport model SDM2013-105 |
Shohiro Sho, Shinji Odanaka (Osaka Univ.) |
Fri, Nov 15 AM
10:00 - 11:40 |
| (8) |
10:00-10:25 |
Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors SDM2013-106 |
Chika Tanaka, Daisuke Hagishima (Toshiba), Ken Uchida (Keio Univ.), Toshinori Numata (Toshiba) |
| (9) |
10:25-10:50 |
Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect SDM2013-107 |
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Kazuo Nakazato (Nagoya Univ.) |
| (10) |
10:50-11:15 |
Physical Model and Simulations on Resistive Transition of Pt/TiO2/Pt Capacitor SDM2013-108 |
Yasuhisa Omura, Yusuke Kondo (Kansai Univ.) |
| (11) |
11:15-11:40 |
Theoretical Modeling of Double-Gate Lateral Tunnel FET SDM2013-109 |
Yasuhisa Omura, Daiki Sato, Shingo Sato (Kansai Univ.), Abhijit Mallik (Univ. of Calcuitta) |
| |
11:40-13:00 |
Lunch ( 80 min. ) |
Fri, Nov 15 PM
13:00 - 14:15 |
| (12) |
13:00-13:25 |
NEGF Simulation for Studying Effect of Screening and Impurity Scattering in Junctionless Transistors SDM2013-110 |
Akiko Ueda (Univ. of Tsukuba), Mathieu Luisier (ETH Zurich), Katsuhisa Yoshida, Syuta Honda, Nobuyuki Sano (Univ. of Tsukuba) |
| (13) |
13:25-13:50 |
Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach SDM2013-111 |
Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) |
| (14) |
13:50-14:15 |
Analysis of Thermoelectric Performance in Silicon Nanostructures Based on Monte Carlo Method SDM2013-112 |
Indra Nur Adisusilo, Kentaro Kukita (Osaka Univ.), Yoshinari Kamakura (Osaka Univ./JST CREST) |
| |
14:15-14:35 |
Break ( 20 min. ) |
Fri, Nov 15 PM
14:35 - 15:50 |
| (15) |
14:35-15:00 |
Possible Unified Model for the Hooge Parameter in Inversion-Layer-Channel MOSFET SDM2013-113 |
Yasuhisa Omura (Kansai Univ.) |
| (16) |
15:00-15:25 |
Impacts of Channel Doping on Random Telegraph Signal Noise and Successful Noise Suppression by Mobility Enhancement SDM2013-114 |
Jiezhi Chen, Yusuke Higashi, Izumi Hirano, Yuichiro Mitani (Toshiba) |
| (17) |
15:25-15:50 |
Reconsideration of Effective MOSFET Channel Length SDM2013-115 |
Kazuo Terada, Kazuhiko Sanai, Katsuhiro Tsuji (Hiroshima City Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Tatsuya Kunikiyo (Renesas)
TEL: 072-787-2408
FAX: 072-789-3438
E- :         zn    s |
Last modified: 2013-09-17 12:44:12
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