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| Chair |
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Koichi Maezawa (Univ. of Toyama) |
| Vice Chair |
|
Kunio Tsuda (Toshiba) |
| Secretary |
|
Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST) |
| Assistant |
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Manabu Arai (New JRC), Masataka Higashiwaki (NICT) |
|
|
|
| Chair |
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Satoru Noge (Numazu National College of Tech.) |
| Vice Chair |
|
Fumihiko Hirose (Yamagata Univ.) |
| Secretary |
|
Junichi Kodate (NTT), Nobuyuki Iwata (Nihon Univ.) |
| Assistant |
|
Takashi Sakamoto (NTT), Yuichi Nakamura (Toyohashi Univ. of Tech.) |
|
|
|
| Chair |
|
Hajime Shoji (Sumitomo Electric Industries) |
| Vice Chair |
|
Susumu Noda (Kyoto Univ.) |
| Secretary |
|
Toshimasa Umezawa (NICT), Naoki Fujiwara (NTT) |
|
| Conference Date |
Thu, Nov 26, 2015 10:30 - 17:20
Fri, Nov 27, 2015 10:00 - 16:15 |
| Topics |
Nitride Semiconductor Devices, Materials, Related Technologies |
| Conference Place |
Osaka City University Media Center |
| Transportation Guide |
https://www.media.osaka-cu.ac.jp |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Nov 26 AM
10:30 - 12:10 |
| (1) |
10:30-10:55 |
Study on AlGaN formation on alpha-(AlGa)2O3 by surface nitridation using radio frequency nitrogen plasma  ED2015-68 CPM2015-103 LQE2015-100 |
Tsutomu Araki, Akira Buma, Nao Masuda, Yasushi Nanishi (Ritsumeikan Univ.), Masaya Oda, Toshimi Hitora (FLOSFIA) |
| (2) |
10:55-11:20 |
Growth of AlN with annealing on different misoriented c-plane sapphire ED2015-69 CPM2015-104 LQE2015-101 |
Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) |
| (3) |
11:20-11:45 |
AlN growth on AlN/Sapphire substrate by RF-HVPE ED2015-70 CPM2015-105 LQE2015-102 |
Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Motoaki Iwaya, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) |
| (4) |
11:45-12:10 |
Electronic and optical characteristics of an m-plane freestanding GaN substrate grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method using an acidic mineralizer ED2015-71 CPM2015-106 LQE2015-103 |
Kazunobu Kojima (Tohoku Univ.), Yusuke Tsukada (MCC), Erika Furukawa, Makoto Saito (Tohoku Univ.), Yutaka Mikawa, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito (MCC), Akira Uedono (Tsukuba Univ.), Shigefusa F. Chichibu (Tohoku Univ.) |
| |
12:10-13:10 |
Break ( 60 min. ) |
Thu, Nov 26 PM
13:10 - 14:50 |
| (5) |
13:10-13:35 |
Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements ED2015-72 CPM2015-107 LQE2015-104 |
Masahiro Horita (Kyoto Univ.), Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo (Fuji Electric), Jun Suda (Kyoto Univ.) |
| (6) |
13:35-14:00 |
Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement ED2015-73 CPM2015-108 LQE2015-105 |
Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) |
| (7) |
14:00-14:25 |
Photoresponse of Homoepitaxial N-type GaN Schottky Barrier Diodes ED2015-74 CPM2015-109 LQE2015-106 |
Takuya Maeda (Kyoto Univ.), Masaya Okada (Sumitomo electric industries,Ltd.), Yoshiyuki Yamamoto, Masaki Ueno (Sumitomo electric industries), Masahiro Horita, Jun Suda (Kyoto Univ.) |
| (8) |
14:25-14:50 |
A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD) ED2015-75 CPM2015-110 LQE2015-107 |
Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda (Panasonic) |
| |
14:50-15:05 |
Break ( 15 min. ) |
Thu, Nov 26 PM
15:05 - 16:20 |
| (9) |
15:05-15:30 |
[Invited Talk]
Spatio-time-resolved cathodoluminescence studies on Si-doped high AlN mole fraction AlxGa1-xN multiple quantum wells grown on an AlN epitaxial templates ED2015-76 CPM2015-111 LQE2015-108 |
Shigefusa Chichibu (Tohoku U.), Hifdeto Miyake, Kazumasa Hiramatsu (Mie-U) |
| (10) |
15:30-15:55 |
Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements ED2015-77 CPM2015-112 LQE2015-109 |
Kohei Kawakami, Takashi Nakano, Atsushi A Yamaguchi (KIT) |
| (11) |
15:55-16:20 |
Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals ED2015-78 CPM2015-113 LQE2015-110 |
Takashi Nakano, Kouhei Kawakami, Atsushi A. Yamaguchi (KIT) |
| |
16:20-16:30 |
Break ( 10 min. ) |
Thu, Nov 26 PM
16:30 - 17:20 |
| (12) |
16:30-16:55 |
Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers ED2015-79 CPM2015-114 LQE2015-111 |
Ryosuke Ishido, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (13) |
16:55-17:20 |
Plasmonics with Aluminum applied to emission enhancements ED2015-80 CPM2015-115 LQE2015-112 |
Koichi Okamoto, Kazutaka Tateishi, Shun Kawamoto, Haruku Nishida, Kaoru Tamada (Kyushu Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
Fri, Nov 27 AM
10:00 - 12:05 |
| (14) |
10:00-10:25 |
Behavior of Plasma-induced Defects in GaN
-- Comparison between n- and p type GaN -- |
Yusuke Koga, Seiji Nakamura, Tsugunori Okumura (TMU) |
| (15) |
10:25-10:50 |
Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source ED2015-81 CPM2015-116 LQE2015-113 |
P.Pungboon Pansila, Kensaku Kanomata, Bashir Ahammad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ) |
| (16) |
10:50-11:15 |
Interface analysis of Ti/Al-based ohmic contact on AlGaN/GaN structure grown on GaN substrate |
Dariush H. Zadeh, Tanabe Shinichi, Watanabe Noriyuki, Matsuzaki Hideaki (NTT) |
| (17) |
11:15-11:40 |
Interface states and device characteristics of AlGaN/GaN MIS-HEMTs with HfO2 fabricated by atomic layer deposition ED2015-82 CPM2015-117 LQE2015-114 |
Gosuke Nishino, Toshiharu Kubo, Takashi Egawa (NITech) |
| (18) |
11:40-12:05 |
Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate ED2015-83 CPM2015-118 LQE2015-115 |
Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech) |
| |
12:05-13:05 |
Break ( 60 min. ) |
Fri, Nov 27 PM
13:05 - 14:20 |
| (19) |
13:05-13:30 |
Recent progress of GaN-based Terahertz Quantum Cascade Lasers ED2015-84 CPM2015-119 LQE2015-116 |
Wataru Terashima, Hideki Hirayama (RIKEN) |
| (20) |
13:30-13:55 |
High-temperature growth of a-AlGaN/AlN and its optical properties ED2015-85 CPM2015-120 LQE2015-117 |
Masafumi Jo, Hideki Hirayama (RIKEN) |
| (21) |
13:55-14:20 |
Growth and optical properties of semi-polar AlGaN/AlN layers grown on m-plane sapphire substrates ED2015-86 CPM2015-121 LQE2015-118 |
Issei Oshima (Saitama Univ./RIKEN), Masafumi Jo, Noritoshi Maeda (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN) |
| |
14:20-14:35 |
Break ( 15 min. ) |
Fri, Nov 27 PM
14:35 - 16:15 |
| (22) |
14:35-15:00 |
Improved Properties in InGaN-based Solar Cells by surface passivation process. ED2015-87 CPM2015-122 LQE2015-119 |
Kabata, Tsutsumi Tatsuya, Miyoshi Makoto, Egawa Takashi (Nagoya Inst of Tech) |
| (23) |
15:00-15:25 |
Evaluation of the bonding interface of multi-junction solar cell according to smart stack technology ED2015-88 CPM2015-123 LQE2015-120 |
Shoichiro Nonaka, Akio Furukawa (Tokyo Univ. of Science), Kikuo Makita, Hidenori Mizuno, Takeyoshi Sugaya, Shigeru Niki (AIST) |
| (24) |
15:25-15:50 |
Effects of annealing on the electrical characteristics of GaAs/GaAs junctions ED2015-89 CPM2015-124 LQE2015-121 |
Li Chai, Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) |
| (25) |
15:50-16:15 |
Electrical characteristics of Si/SiC junctions using surface activated bonding ED2015-90 CPM2015-125 LQE2015-122 |
Tomohiro Hayashi, Jianbo Liang (Osaka City Univ.), Manabu Arai (New Japan Radio Co.), Naoteru Shigekawa (Osaka City Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
|
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
|
| LQE |
Technical Committee on Lasers and Quantum Electronics (LQE) [Latest Schedule]
|
| Contact Address |
Toshimasa Umezawa (NICT)
TEL +81-42-327-7528, FAX +81-42-327-7938
E- :   _u     
Naoki Fujiwara (NTT)
TEL +81-46-240-3266, FAX +81-46-240-4345
E-:      o    |
| Announcement |
Homepage of LQE is http://www.ieice.org/~lqe/jpn/ |
Last modified: 2015-11-26 10:59:55
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