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| Chair |
|
Hiroshige Hirano (TowerPartners Semiconductor) |
| Vice Chair |
|
Shunichiro Ohmi (Tokyo Inst. of Tech.) |
| Secretary |
|
Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) |
| Assistant |
|
Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.) |
|
| Conference Date |
Thu, Oct 22, 2020 10:00 - 16:20 |
| Topics |
Process Science and New Process Technology |
| Conference Place |
Online |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Thu, Oct 22 AM
10:00 - 16:20 |
| (1) |
10:00-10:50 |
[Memorial Lecture]
Atomic layer controlled etching process using plasma  SDM2020-14 |
Sho Kumakura (Tokyo Electron Miyagi) |
| (2) |
10:50-11:20 |
High capacitance density high breakdown voltage textured deep trench SiN capacitors toward 3D integration SDM2020-15 |
Koga Saito, Ayano Yoshida, Rihito Kuroda (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Naoya kuriyama (LAPIS Semiconductor Miyagi), Shigetoshi Sugawa (Tohoku Univ.) |
| |
11:20-13:00 |
Lunch Break ( 100 min. ) |
| (3) |
13:00-13:30 |
Investigation of N-doped LaB6/LaBxNy/Si(100) MIS structure and floating-gate memory applications SDM2020-16 |
Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech) |
| (4) |
13:30-14:00 |
A two-step wet etching process for the integration of PdEr/HfO2 gate stack structure on the gate-first Schottky barrier MOSFET SDM2020-17 |
Rengie Mark D. Mailig, Yuichiro Aruga, Shun-ichiro Ohmi (Tokyo Tech) |
| (5) |
14:00-14:30 |
Investigation on millisecond solid phase crystallization of amorphous silicon films induced by micro thermal plasma jet. SDM2020-18 |
Hoa Thi Khanh Nguyen, Hiroaki Hanafusa, Yuri Mizukawa (Hiroshima Univ.), Shohei Hayashi (Toray Res. Cent.), Seiichiro Higashi (Hiroshima Univ.) |
| |
14:30-14:50 |
Break ( 20 min. ) |
| (6) |
14:50-15:20 |
Modification of states of copper and copper oxide due to IPA treatment SDM2020-19 |
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) |
| (7) |
15:20-15:50 |
Lattice Matching and X-ray Structural Analysis of Ferroelectric Thin Film BiFeO3 SDM2020-20 |
Fuminobu Imaizumi, Rikuto Nakada (NIT, Oyama College) |
| (8) |
15:50-16:20 |
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis SDM2020-21 |
Ryo Akimoto, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Memorial Lecture | Each speech will have 40 minutes for presentation and 10 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
SDM Secretary: MORI Takahiro(National Institute of AIST)
Tel +81-29-849-1149
E-Mail   -    aist |
Last modified: 2020-11-06 16:09:28
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