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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2009)
Search Results: Keywords 'from:2009-06-24 to:2009-06-24'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED | 2009-06-24 14:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband Toshihide Suzuki, Yoichi Kawano (Fujitsu/Fujitsu Labs.), Masaru Sato (Fujitsu Labs.), Yasuhiro Nakasha, Tatsuya Hirose (Fujitsu/Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Kazukiyo Joshin (Fujitsu/Fujitsu Labs.)  ED2009-50 SDM2009-45 |
This paper presents quasi-millimeter and millimeter power amplifiers (PA) fabricated in a standard 90-nm CMOS process. A... [more] | ED2009-50 SDM2009-45 pp.1-4 |
| SDM, ED | 2009-06-24 14:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits Shoji Ikeda (Tohoku Univ.), Jun Hayakawa (Hitachi, Ltd.), Huadong Gan, Kotaro Mizumuma, Ji Ho Park (Tohoku Univ.), Hiroyuki Yamamoto, Katsuya Miura (Hitachi, Ltd./Tohoku Univ.), Haruhiro Hasegawa, Ryutaro Sasaki, Toshiyasu Meguro (Tohoku Univ.), Kenchi Ito (Hitachi, Ltd.), Fumihiro Matsukura, Hideo Ohno (Tohoku Univ.) ED2009-51 SDM2009-46 |
Magnetoresistive random access memory (MRAM) using magnetic tunnel junctions (MTJs) is one of the candidates of universa... [more] | ED2009-51 SDM2009-46 pp.5-8 |
| SDM, ED | 2009-06-24 15:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-52 SDM2009-47 |
In this paper, it is shown that our fabricated MTJ of 60x180${\rm nm^2}$, which is connected to the MOSFET in series by ... [more] | ED2009-52 SDM2009-47 pp.9-12 |
| SDM, ED | 2009-06-24 15:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-53 SDM2009-48 |
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] | ED2009-53 SDM2009-48 pp.13-16 |
| SDM, ED | 2009-06-24 16:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System. Jae-Young Park, Jong-Kyu Song, Dae-Woo Kim, Chang-Soo Jang, Won-Young Jung, Taek-Soo Kim (Dongbu HiTek) ED2009-54 SDM2009-49 |
[more] | ED2009-54 SDM2009-49 pp.17-20 |
| SDM, ED | 2009-06-24 16:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation Tetsuo Endoh, Hyoungjun Na (Tohoku Univ.) ED2009-55 SDM2009-50 |
A Current Controlled (CC-) MOS Current Mode Logic (MCML) circuit based on auto-detection of threshold voltage (Vth) fluc... [more] | ED2009-55 SDM2009-50 pp.21-24 |
| SDM, ED | 2009-06-24 16:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-um Si RFCMOS Technology Seung-Woo Seo, Jae-Sung Rieh (Korea Univ.) ED2009-56 SDM2009-51 |
[more] | ED2009-56 SDM2009-51 pp.25-28 |
| SDM, ED | 2009-06-24 16:45 |
Overseas | Haeundae Grand Hotel, Busan, Korea | A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies Kenichi Abe, Takafumi Fujisawa, Akinobu Teramoto, Syunichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2009-57 SDM2009-52 |
[more] | ED2009-57 SDM2009-52 pp.29-32 |
| SDM, ED | 2009-06-24 17:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | A 0.18um CMOS over 10 Gb/s 10-PAM Serial Link Receiver Jeongjun Lee, Jikyung Jeong, Jinwook Burm (Sogang University) ED2009-58 SDM2009-53 |
[more] | ED2009-58 SDM2009-53 pp.33-36 |
| SDM, ED | 2009-06-24 17:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | A CMOS 12.8 Gb/s 10-PAM transmitter for chip-to-chip communication Jikyung Jeong, Jeongjun Lee, Jinwook Burm (Sogang University) ED2009-59 SDM2009-54 |
[more] | ED2009-59 SDM2009-54 pp.37-40 |
| SDM, ED | 2009-06-24 17:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Fundamental study of a composite right/left-handed transmission line with self-multiplexed properties toward functional wireless interconnects Sadaharu Ito, Michihiko Suhara (Tokyo Metro Univ.) ED2009-60 SDM2009-55 |
A composite right/left-handed (CRLH) transmission line with self-multiplexed properties is proposed towards short-range ... [more] | ED2009-60 SDM2009-55 pp.41-46 |
| SDM, ED | 2009-06-24 14:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Metrology of microscopic properties of graphene on SiC Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi (NTT BRL) ED2009-61 SDM2009-56 |
Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown ... [more] | ED2009-61 SDM2009-56 pp.47-52 |
| SDM, ED | 2009-06-24 14:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Theoretical study on graphene field-effect transistors Eiichi Sano (Hokkaido Univ./JST), Taiichi Otsuji (Tohoku Univ../JST) ED2009-62 SDM2009-57 |
Graphene is one of the most attractive materials for“beyond CMOS” electronics. We investigate graphene-layer composition... [more] | ED2009-62 SDM2009-57 pp.53-58 |
| SDM, ED | 2009-06-24 16:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Characteristics of organic field-effect-transistor with high dielectric constant layer S. Lee, Y. J. Choi, J. Park, K. Y. Ko, I.. S. Park, J. Ahn (Hanyang Univ.) |
[more] | |
| SDM, ED | 2009-06-24 16:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Electrical characteristics of OFETs with thin gate dielectric Young-uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.) ED2009-63 SDM2009-58 |
In order to realize low voltage operation of pentacene-based field-effect-transistors (FETs), we have fabricated pantace... [more] | ED2009-63 SDM2009-58 pp.59-62 |
| SDM, ED | 2009-06-24 16:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Design of 30nm FinFET with Halo Structure Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ../JST-CREST) ED2009-64 SDM2009-59 |
Design of 30nm FinFETs with halo structure for suppressing the threshold voltage roll-off and improving the subthreshold... [more] | ED2009-64 SDM2009-59 pp.63-66 |
| SDM, ED | 2009-06-24 16:45 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier. Joung-eob Lee, Kwon-Chil Kang, Jung-Han Lee, Byung-Gook Park (Seoul National Univ.) ED2009-65 SDM2009-60 |
[more] | ED2009-65 SDM2009-60 pp.67-70 |
| SDM, ED | 2009-06-24 17:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Simulation and Experiment of Liquid-Phase Microjoining Using Cone-Shaped Compliant Bump Lijing Qiu (Kyushu Univ.), Naoya Watanabe (Fukuoka-IST), Tanemasa Asano (Kyushu Univ.) ED2009-66 SDM2009-61 |
In order to meet the requirements of high-density interconnection in 3D-LSI, we have proposed easy-deforming compliant b... [more] | ED2009-66 SDM2009-61 pp.71-74 |
| SDM, ED | 2009-06-24 17:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | A new Combination of RSD and Inside Spacer Thin Film Transistor M. J. Chang, T. C. Li, F. T. Chien (Feng Chia Univ.), C. N. Liao, Y. T. Tsai (National Central Univ.) ED2009-67 SDM2009-62 |
[more] | ED2009-67 SDM2009-62 pp.75-78 |
| SDM, ED | 2009-06-24 17:45 |
Overseas | Haeundae Grand Hotel, Busan, Korea | A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor Jin Kwan Kim (KAIST), Keedong Yang (i3system Conp.), Yong Soo Lee (KAIST), Hee Chul Lee (KAIST/National Nanofab Center) ED2009-69 SDM2009-64 |
[more] | ED2009-69 SDM2009-64 pp.83-86 |
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