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| Chair |
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Hiroshige Hirano (TowerPartners Semiconductor) |
| Vice Chair |
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Shunichiro Ohmi (Tokyo Inst. of Tech.) |
| Secretary |
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Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) |
| Assistant |
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Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.) |
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| Conference Date |
Thu, Nov 19, 2020 09:55 - 17:10
Fri, Nov 20, 2020 09:30 - 17:40 |
| Topics |
Process, Device, Circuit simulation, etc. |
| Conference Place |
Virtual conference |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Thu, Nov 19 AM
09:55 - 12:00 |
| |
09:55-10:00 |
Opening Address ( 5 min. ) |
| (1) |
10:00-11:00 |
[Invited Talk]
SISPAD2020 Review  SDM2020-22 |
Saotumi Souma (Kobe Univ) |
| (2) |
11:00-12:00 |
[Invited Talk]
Interfacial Dipole in the High-k Gate Stack Reproduced by Classical Molecular Dynamics SDM2020-23 |
Takanobu Watanabe (Waseda Univ.) |
| |
12:00-13:10 |
Lunch Break ( 70 min. ) |
Thu, Nov 19 PM
13:10 - 15:10 |
| (3) |
13:10-14:10 |
[Invited Talk]
Toward unification of large-scale first-principles calculations and device/process simulators SDM2020-24 |
Atsushi Oshiyama (Nagoya Univ.) |
| (4) |
14:10-15:10 |
[Invited Talk]
Prediction model of dielectric constants of perovskite-type oxides by first-principles calculations and materials informatics SDM2020-25 |
Yusuke Noda (Kanazawa Gakuin Univ.) |
| |
15:10-15:20 |
Break ( 10 min. ) |
Thu, Nov 19 PM
15:20 - 17:10 |
| (5) |
15:20-16:20 |
[Invited Talk]
A technique for phase-detection auto focus under near-infrared-ray incidence in a back-side illuminated CMOS image sensor pixel SDM2020-26 |
Tatsuya Kunikiyo, Hidenori Sato, Takeshi Kamino, Koji Iizuka, Ken'ichiro Sonoda, Tomohiro Yamashita (Renesas Electronics) |
| (6) |
16:20-16:45 |
A model of dark current mechanism in barrier infrared photodetectors SDM2020-27 |
Yen Le Thi (Hanoi University of Science and Technology), Yoshinari Kamakura (Osaka Institute of Technology), Nobuya Mori (Graduate School of Engineering, Osaka University,) |
| (7) |
16:45-17:10 |
Estimation of Phonon Mean Free Path in Thin Si Wire by Monte Carlo Simulation SDM2020-28 |
Yuhei Suzuki, Yuma Fujita (OIT), Khotimatul Fauziah, Takuto Nogita, Hiroya Ikeda (Shizuoka Univ.), Takanobu Watanabe (Waseda Univ.), Yoshinari Kamakura (OIT) |
Fri, Nov 20 AM
09:30 - 12:30 |
| (8) |
09:30-10:30 |
[Invited Talk]
Current status of silicon quantum computer development |
Kohei Itoh (Keio Univ.) |
| (9) |
10:30-11:30 |
[Invited Talk]
Power Device Degradation Estimation by Machine Learning of Gate Waveforms SDM2020-29 |
Hiromu Yamasaki, Koutaro Miyazaki, Yang Lo, A. K. M. Mahfuzul Islam, Katsuhiro Hata, Takayasu Sakurai, Makoto Takamiya (Univ. of Tokyo) |
| (10) |
11:30-12:30 |
[Invited Talk]
Three-dimensional device simulation of Si IGBTs
-- Investigation of physical models and comparisons with measurements -- SDM2020-30 |
Naoyuki Shigyo, Masahiro Watanabe, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa (Tokyo Tech), Akira Nakajima (AIST), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai (Toshiba), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The Univ. of Tokyo), Hitoshi Wakabayashi, Iriya Muneta (Tokyo Tech), Shin-ichi Nishizawa (Kyushu Univ.), Kazuo Tsutsui (Tokyo Tech), Toshiro Hiramoto (The Univ. of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech) |
| |
12:30-13:30 |
Lunch Break ( 60 min. ) |
Fri, Nov 20 PM
13:30 - 15:30 |
| (11) |
13:30-14:30 |
[Invited Talk]
Analyses of CVD/ALD thin film deposition mechanism by reactive molecular dynamics simulation and quantum chemical calculation SDM2020-31 |
Takashi Tokumasu, Naoya Uene, Takuya Mabuchi (Tohoku Univ.), Masaru Zaitsu, Shigeo Yasuhara (JAC) |
| (12) |
14:30-15:30 |
[Invited Talk]
Insights into etching properties of atomic layer etching process for dielectric films SDM2020-32 |
Nobuyuki Kuboi (SSS) |
| |
15:30-15:40 |
Break ( 10 min. ) |
Fri, Nov 20 PM
15:40 - 17:40 |
| (13) |
15:40-16:40 |
[Invited Talk]
NEGF simulation of band-to-band tunneling in van der Waals heterostructures SDM2020-33 |
Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka (Osaka Univ) |
| (14) |
16:40-17:40 |
[Invited Talk]
TCAD simulation for atomic layer channel Tunnel FETs based on ab-initio band calculation SDM2020-34 |
Hiderhiro Asai (AIST), Tatsuya Kuroda (Osaka Univ.), Koichi Fukuda, Junichi Attori, Tsutomu Ikegami (AIST), Nobuya Mori (Osaka Univ.) |
| Announcement for Speakers |
| Invited Talk | Each speech will have 50 minutes for presentation and 10 minutes for discussion. |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
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Last modified: 2020-09-29 01:17:18
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