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Technical Committee on Electronic Information Displays (EID) (Searched in: 2017)
Search Results: Keywords 'from:2017-12-22 to:2017-12-22'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, EID | 2017-12-22 10:30 |
Kyoto | Kyoto University | Light trapping effect of nanoimprinted texture for thin crystalline silicon solar cell Nakai Yuya, Ishikawa Yasuaki, Uraoka Yukiharu (NAIST)  EID2017-11 SDM2017-72 |
For the purpose of the realization of thin-type crystal silicon solar cells, a light trapping effect in a light absorpti... [more] | EID2017-11 SDM2017-72 pp.1-4 |
| SDM, EID | 2017-12-22 10:45 |
Kyoto | Kyoto University | Conduction mechanisms in heavily Al-doped 4H-SiC epilayers
-- Dependencies of resistivity on Al concentration and temperature -- Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] | EID2017-12 SDM2017-73 pp.5-8 |
| SDM, EID | 2017-12-22 11:00 |
Kyoto | Kyoto University | Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC
-- Relationship between Inversion of Hall Coefficient and Conduction Mechanism -- Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-13 SDM2017-74 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] | EID2017-13 SDM2017-74 pp.9-12 |
| SDM, EID | 2017-12-22 11:15 |
Kyoto | Kyoto University | Electric properties in Al-N codoped p-type 4H-SiC epilayers
-- Comparison between temperature dependent resistivity in Al-doped and codoped samples -- Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-14 SDM2017-75 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduc... [more] | EID2017-14 SDM2017-75 pp.13-16 |
| SDM, EID | 2017-12-22 11:30 |
Kyoto | Kyoto University | Ultra-high power transistor and thyristor consisting of Si solar cell and LED matrix Kensho Okamoto (Opto Device Lab.) |
It is known that classical silicon bipolar transistors, i.e. Si junction transistors, consist of Si layer structure of P... [more] | |
| SDM, EID | 2017-12-22 11:45 |
Kyoto | Kyoto University | Wireless power transmission to biological stimulation devices with a thin film coil Keigo Misawa, Keisuke Tomioka, Kouhei Miyake, Mutsumi Kimura (Ryukoku Univ.) EID2017-15 SDM2017-76 |
We are focusing on biological stimulation devices using thin film devices. In particular, low temperature poly-silicon T... [more] | EID2017-15 SDM2017-76 pp.17-22 |
| SDM, EID | 2017-12-22 13:15 |
Kyoto | Kyoto University | Flexible Device Applications Using GaSnO Thin Films Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-16 SDM2017-77 |
Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO)... [more] | EID2017-16 SDM2017-77 pp.23-28 |
| SDM, EID | 2017-12-22 13:30 |
Kyoto | Kyoto University | Seebeck effect measurement of rare metal free oxide semiconductor Ryuki Nomura, Tatsuya Aramaki, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-17 SDM2017-78 |
It is thought that if we convert thermal energy to electric energy efficiently, we can reduce the amount of oil used. Ho... [more] | EID2017-17 SDM2017-78 pp.29-34 |
| SDM, EID | 2017-12-22 13:45 |
Kyoto | Kyoto University | Three-dimension periodic nano-structure fabricated by proximity nano-patterning process (PnP) Xudongfang Wang, Yasuaki Ishikawa, Shinji Araki, Yukiharu Uraoka (NAIST), Seokwoo Jeon (KAIST) EID2017-18 SDM2017-79 |
In recent years, 3D periodic nanostructure have attracted considerable interest because of its excellent performance and... [more] | EID2017-18 SDM2017-79 pp.35-38 |
| SDM, EID | 2017-12-22 14:00 |
Kyoto | Kyoto University | Brain type integrated system using IGZO thin film as variable resistance element Daiki Yamakawa, Yuki Shibayama, Keisuke Ikushima, Sumio Sugisaki (Ryukoku Univ.), Yoshinori Miyamae (ROHM), Mutsumi Kimura (Ryukoku Univ.) EID2017-19 SDM2017-80 |
[more] | EID2017-19 SDM2017-80 pp.39-44 |
| SDM, EID | 2017-12-22 14:15 |
Kyoto | Kyoto University | Cross point synapse using amorphous oxide semiconductor for neurocomputing devices Ryo Tanaka, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) EID2017-20 SDM2017-81 |
(To be available after the conference date) [more] | EID2017-20 SDM2017-81 pp.45-49 |
| SDM, EID | 2017-12-22 14:30 |
Kyoto | Kyoto University | Simulation of neural network using ferroelectric capacitor Isato Ogawa, Tomoharu Yokoyama, Mutsumi Kimura (Ryukoku Univ.) EID2017-21 SDM2017-82 |
The neural network aims to realize a new engineering information processing system by learning from the advanced informa... [more] | EID2017-21 SDM2017-82 pp.51-55 |
| SDM, EID | 2017-12-22 14:45 |
Kyoto | Kyoto University | Modification effects of ferroelectric thick-film properties on silicon substrates by proton beam irradiation Jun Hirade, Masaki Yamaguchi (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) EID2017-22 SDM2017-83 |
Ferroelectric thin films deposited on silicon substrates are expected to be applied to nonvolatile memories, photonic ... [more] |
EID2017-22 SDM2017-83 pp.57-62 |
| SDM, EID | 2017-12-22 15:00 |
Kyoto | Kyoto University | Characteristic Evaluation of GaSnO Thin Films deposited using Mist Chemical Vapor Deposition Ryugo Okamoto, Hiroki Fukushima (Ryukoku Univ), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsumi Kimura (Ryukoku Univ) EID2017-23 SDM2017-84 |
[more] | EID2017-23 SDM2017-84 pp.63-66 |
| SDM, EID | 2017-12-22 15:30 |
Kyoto | Kyoto University | Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.) EID2017-24 SDM2017-85 |
Germanium tin (GeSn) is known as a new semiconductor device material. We used metal induced crystallization (MIC) using ... [more] | EID2017-24 SDM2017-85 pp.67-70 |
| SDM, EID | 2017-12-22 15:45 |
Kyoto | Kyoto University | Operation verification of Thin-Film Biostimulating Device using Thin-Film Transistors Kohei Miyake, Keisuke Tomioka, Keigo Misawa, Mutsumi kimura (Ryukoku Univ.) EID2017-25 SDM2017-86 |
Application to the medical field is expected from the characteristics of thin-film transistors (TFTs). We studied whethe... [more] | EID2017-25 SDM2017-86 pp.71-76 |
| SDM, EID | 2017-12-22 16:00 |
Kyoto | Kyoto University | Effect of SiOx capping film on crystallization of Ge film by flash lamp annealing Naoki Yoshioka, Yoshiki Akita, Akira Heya, Naoto Matsuo (Univ of Hyogo), Kazuyuki Kohama, Kazuhiro Itou (Osaka Univ) EID2017-26 SDM2017-87 |
[more] | EID2017-26 SDM2017-87 pp.77-80 |
| SDM, EID | 2017-12-22 16:15 |
Kyoto | Kyoto University | Effect of photonic band gap on flash-lamp-annealing crystallization for Islands-shape a-Ge film Naoki Yoshioka, Akira Heya, Naoto Matsuo, Yoshiki Akita (Univ og Hyogo) EID2017-27 SDM2017-88 |
[more] | EID2017-27 SDM2017-88 pp.81-84 |
| SDM, EID | 2017-12-22 16:30 |
Kyoto | Kyoto University | Study for hole- or electron- conduction of DNA/Si-MOSFET Hibiki Nakano, Matsuo Naoto, Akira Heya, Tadao Takada, Kazusige Yamana (Univ. of Hyogo), Tadashi Sato, Shin Yokoyama (Univ. Hiroshima), Omura Yasuhisa (Univ.Kansai) EID2017-28 SDM2017-89 |
[more] | EID2017-28 SDM2017-89 pp.85-88 |
| SDM, EID | 2017-12-22 16:45 |
Kyoto | Kyoto University | Analytical study for electric resistance of grafene Naoto Matsuo, Akira Heya (Univ Hyogo) EID2017-29 SDM2017-90 |
[more] | EID2017-29 SDM2017-90 pp.89-92 |
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