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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2015)
Search Results: Keywords 'from:2015-10-29 to:2015-10-29'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-10-29 14:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Current situation and challenging for ion implantation technology Yoshiki Nakashima, Nariaki Hamamoto, Shigeki Sakai, Hiroshi Onoda (NIC)  SDM2015-71 |
[more] | SDM2015-71 pp.1-6 |
| SDM | 2015-10-29 14:50 |
Miyagi | Niche, Tohoku Univ. | A study on Si surface flattening process by annealing Ar/H2ambient Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-72 |
It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] | SDM2015-72 pp.7-12 |
| SDM | 2015-10-29 15:20 |
Miyagi | Niche, Tohoku Univ. | Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-73 |
In order to flatten any crystal orientation of Si surface including Si-fin-structure and to introduce the flattening pro... [more] | SDM2015-73 pp.13-16 |
| SDM | 2015-10-29 16:00 |
Miyagi | Niche, Tohoku Univ. | Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ.), Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa (LAPIS Semi. Miyagi) SDM2015-74 |
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] | SDM2015-74 pp.17-22 |
| SDM | 2015-10-29 16:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Low-power and high-speed FPGA by adjacent integration of flash memory and CMOS logic Koichiro Zaitsu, Kosuke Tatsumura, Mari Matsumoto, Masato Oda, Shinichi Yasuda (Toshiba) SDM2015-75 |
Novel nonvolatile programmable switch for low-power and high-speed FPGA where flash memory is adjacently integrated to C... [more] | SDM2015-75 pp.23-28 |
| SDM | 2015-10-30 09:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Radial line slot antenna microwave plasma source mediated conformal doping of non-planar silicon structures Hirokazu Ueda (TEL TDC), Peter Ventzek (TEL America), Masahiro Oka, Yuuki Kobayashi, Yasuhiro Sugimoto, Satoru Kawakami (TEL TDC) SDM2015-76 |
Conformal plasma doping for topographic structures was achieved using microwave plasmas with low temperature annealing. ... [more] | SDM2015-76 pp.29-33 |
| SDM | 2015-10-30 10:20 |
Miyagi | Niche, Tohoku Univ. | A Device Simulation Study on Tunneling and Diffusion Current Hybrid MOSFET Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Takashi Kojiri, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-77 |
[more] | SDM2015-77 pp.35-40 |
| SDM | 2015-10-30 10:50 |
Miyagi | Niche, Tohoku Univ. | Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-78 |
Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroe... [more] | SDM2015-78 pp.41-44 |
| SDM | 2015-10-30 13:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Materials and process technologies for large-area sheet-type display Yoshihide Fujisaki (NHK) SDM2015-79 |
Flexible organic light-emitting diode display (OLED) displays using a plastic substrate attract much attentions due to i... [more] | SDM2015-79 pp.45-48 |
| SDM | 2015-10-30 13:50 |
Miyagi | Niche, Tohoku Univ. | A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator Yasutaka Maeda, Yeyuan Liu, Shun-ichiro Ohmi (Tokyo Tech.) SDM2015-80 |
The grain growth of pentacene thin film, which is well known as p-type organic semiconductor, is sensitive for underneat... [more] | SDM2015-80 pp.49-52 |
| SDM | 2015-10-30 14:30 |
Miyagi | Niche, Tohoku Univ. | Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering Hidekazu Ishii (Tohoku Univ), Takahashi Kentarou (Sumitomo Osaka Cement), Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) SDM2015-81 |
LaB6 thin films were deposited by magnetron sputtering, and their work function was investigated. It was found that the ... [more] | SDM2015-81 pp.53-56 |
| SDM | 2015-10-30 15:00 |
Miyagi | Niche, Tohoku Univ. | Investigation of stacked HfN gate insulator formed by ECR plasma sputtering Nithi Atthi, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-82 |
In this paper, the effects of HfN1.0 interfacial layer (IL) on the electrical characteristics of HfN1.3 layer formed by ... [more] | SDM2015-82 pp.57-62 |
| SDM | 2015-10-30 15:30 |
Miyagi | Niche, Tohoku Univ. | Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii (Tohoku Univ.), Satoru Yamashita (Fujikin), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-83 |
[more] | SDM2015-83 pp.63-68 |
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