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Technical Committee on Silicon Device and Materials (SDM)  (Searched in: 2015)

Search Results: Keywords 'from:2015-11-05 to:2015-11-05'
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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-11-05
10:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Current Status of Impurity Diffusion Modeling in Semiconductors
Masashi Uematsu (Keio Univ.) SDM2015-84		 With the scaledown of CMOS devices, it is crucial to establish a diffusion model to accurately predict impurity diffusio... [more] SDM2015-84
pp.1-6
SDM 2015-11-05
11:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Deep P-Well Structure on Single Event Latchup in Bulk CMOS
Takashi Kato, Hideya Matsuyama (SNI) SDM2015-85		  [more] SDM2015-85
pp.7-11
SDM 2015-11-05
11:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Ultra-High-Speed Image Sensor with Monte Carlo Simulation
Natsumi Minamitani (Osaka Univ.), Vu Truon Son Dao, Kazuhiro Shimonomura, Takeharu Goji Etoh (Ritsumeikan Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.) SDM2015-86		 We computationally investigate the fundamental properties of electron transport in the backside-illuminated CCD image se... [more] SDM2015-86
pp.13-17
SDM 2015-11-05
13:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] SISPAD 2015 Review
Hideki Minari (Sony) SDM2015-87		  [more] SDM2015-87
pp.19-22
SDM 2015-11-05
14:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Review of SISPAD2015
Tatsuya Kunikiyo (Renesas) SDM2015-88		 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2015) was held on September 9... [more] SDM2015-88
pp.23-27
SDM 2015-11-06
11:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Simulation of Dirac Electron Engineering Device Using Strained Graphene
Satofumi Souma, Miku Tanaka, Keisuke Ichihara, Shotaro Sakoda, Kenji Sasaoka, Matsuto Ogawa (Kobe Univ.) SDM2015-89		 MOSFET has been scaled down according to the Moore's law. As the channel length gets close to the nanometer-size, howeve... [more] SDM2015-89
pp.29-34
SDM 2015-11-06
13:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] GaN-based devices on Si substrates for power conversion systems
Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90		 GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable... [more] SDM2015-90
pp.35-38
SDM 2015-11-06
14:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs
Atsushi Sakai, Katsumi Eikyu, Kenichiro Sonoda (REL), Kenichi Hisada, Koichi Arai, Yoichi Yamamoto (RSMC), Motoaki Tanizawa, Yasuo Yamaguchi (REL) SDM2015-91		  [more] SDM2015-91
pp.39-43
 Results 1 - 8 of 8  /   
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