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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2024-01-26
11:10		 Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)		 Temperature Characteristics Measurement and RF Device Modeling of Hydrogen-terminated Diamond FET
Tomoyuki Furuichi, Fumito Karasawa (Tohoku Univ.), Hiroyuki Kawashima, Tomoko Wakai (ODD), Tadashi Masumura (Hokkaido Univ.), Takahiro Yamaguchi (ODD), Junichi H. Kaneko (Hokkaido Univ.), Hitoshi Umezawa (ODD), Noriharu Suematsu (Tohoku Univ.) ED2023-74 MW2023-166		  [more] ED2023-74 MW2023-166
pp.41-46
SDM 2021-01-28
13:35		 Online Online [Invited Talk] Diamond Semiconductor Devices, state-of-the-art of material growth and device processing
Hitoshi Umezawa (AIST) SDM2020-50		  [more] SDM2020-50
pp.3-7
LQE, LSJ 2013-05-17
15:20		 Ishikawa   Optical and spin properties of nitrogen-vacancy centers in diamond fabricated using nitrogen-doped isotopically-enriched chemical vapor deposition
Tomohiro Gomi, Shuhei Tomizawa (Keio Univ.), Hideyuki Watanabe, Hitoshi Umezawa, Shin-ichi Shikata (AIST), Kohei M. Itoh, Junko Ishi-Hayase (Keio Univ.) LQE2013-12		 An electronic spin state of nitrogen-vacancy (NV) centers in diamond is expected as an promising candidate for quantum i... [more] LQE2013-12
pp.53-56
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