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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2007-06-08
15:30		 Hiroshima Hiroshima Univ. ( Faculty Club) Growth and Characterization of Pr-Oxide-Based Dielectric Films on Ge Substrates
Mitsuo Sakashita, Nobuyuki Kito (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) SDM2007-51		 A Ge MOSFET with a high-k dielectric film is considered to be an attractive candidate for high performance devices. We ... [more] SDM2007-51
pp.107-111
RCS, AP, WBS, SR, MW, MoNA
(Joint)		 2006-03-03
15:40		 Kanagawa YRP -
Futoshi Kuroki, Kazuya Miyamoto (KNCT) 		A new transmission media using high permittivity dielectric materials was proposed for mass productivity of dielectric w... [more] MW2005-187
pp.49-52
RCS, AP, WBS, SR, MW, MoNA
(Joint)		 2006-03-03
16:00		 Kanagawa YRP -
Futoshi Kuroki, Yu-suke Takigawa (KNCT) 		Radiation characteristics of printed antennas etched on a high permittivity dielectric substrate with a relative dielect... [more] MW2005-188
pp.53-56
RCS, AP, WBS, SR, MW, MoNA
(Joint)		 2006-03-03
16:20		 Kanagawa YRP -
Futoshi Kuroki, Kazuya Miyamoto (KNCT) 		Newly-proposed high permittivity tape transmission line was theoretically and experimentally investigated at millimeter-... [more] MW2005-189
pp.57-60
ICD, SDM 2005-08-19
10:00		 Hokkaido HAKODATE KOKUSAI HOTEL [Special Invited Talk] HfSiON -- its high applicability as the alternative gate dielectric based on the high thermal stability and the remaining issue --
Akira Nishiyama, Masato Koyama, Yuuichi Kamimuta, Masahiro Koike, Ryosuke Iijima, Takeshi Yamaguchi, Masamichi Suzuki, Tsunehiro Ino, Mizuki Ono (Toshiba) 		The decrease in the MOS device size has long been requiring the thinning of its gate dielectrics. In order to suppress t... [more] SDM2005-146 ICD2005-85
pp.19-24
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