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Technical Committee on Electron Devices (ED) (Searched in: 2011)
Search Results: Keywords 'from:2011-07-29 to:2011-07-29'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2011-07-29 13:30 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Effect of C and Si co-doping high resistivity GaN buffer layer on AlGaN/GaN HFETs Masayuki Fukai, Shusuke Kakizawa, Hiroshi Fushimi (New Japan Radio)  ED2011-37 |
Based on Fermi level effect, we intentionally incorporated carbon into Si-doped GaN by low-temperature grown MOVPE at 95... [more] | ED2011-37 pp.1-6 |
| ED | 2011-07-29 13:55 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Control of Interface Electric Charge by MIM Gate Structure on AlGaN/GaN HFETs Yoshimichi Fukasawa, Eiji Waki, Hiroshi Fushimi (New Japan Radio) ED2011-38 |
We introduce Metal-Insulator-Metal (MIM) gate AlGaN/GaN HFETs that control the electronic charge generated on SiN/AlGaN ... [more] | ED2011-38 pp.7-12 |
| ED | 2011-07-29 14:20 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET Hong-An Shih, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST) ED2011-39 |
[more] | ED2011-39 pp.13-16 |
| ED | 2011-07-29 14:45 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Characterization of MOS interfaces and current collapse in AlGaN/GaN HEMTs Tamotsu Hashizume, Chihoko Mizue, Yujin Hori, Masafumi Tajima, Kota Ohi (Hokkaido Univ.) ED2011-40 |
[more] | ED2011-40 pp.17-20 |
| ED | 2011-07-29 15:20 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Deposition of Nb2O5 films by fiash boiling spray CVD Koji Tominaga (HORIBA), Masanori Trasaka, Tetsuo Shimizu (STEC), Jiro Senda (Doshisha Univ.), Kozo Ishida (HORIBA) ED2011-41 |
Nb2O5 thin films are a DRAM capacitor material with over 4Gbit because the specific inductive capacity is 60. In CVD pro... [more] | ED2011-41 pp.21-24 |
| ED | 2011-07-29 15:45 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Effects of surface pre-treatments for AlN sputtering and Al2O3 atomic layer depositions on GaAs(001) Masahiro Kudo, Hong-An Shih, Masashi Akabori, Toshi-kazu Suzuki (JAIST) ED2011-42 |
[more] | ED2011-42 pp.25-30 |
| ED | 2011-07-29 16:10 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Characterization of Low-Frequency Noise in SiNx Insulator-Gate GaAs Etched Nanowire FETs Toru Muramatsu, Kensuke Miura, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.) ED2011-43 |
Noise in a semiconductor field-effect transistor (FET) is going to increase, as the device size is reduced. The importan... [more] | ED2011-43 pp.31-34 |
| ED | 2011-07-29 16:35 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Inductively coupled plasma etching of Al-rich AlGaAs for Photonic Crystal Fabrication Yuta Kitabayashi, Masaya Mochizuki, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.) ED2011-44 |
We investigate inductively coupled plasma deep dry etching of Al$_{0.8}$Ga$_{0.2}$As for photonic crystal（PC）fabrication... [more] | ED2011-44 pp.35-39 |
| ED | 2011-07-29 17:00 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Spring Characteristics of Circular Arc Shaped 3D Micro-cantilevers Fabricated Using III-V Semiconductor Strain-driven Bending Process Hiuma Iwase, Jian Wang, Masashi Akabori, Syoji Yamada (JAIST) ED2011-45 |
[more] | ED2011-45 pp.41-44 |
| ED | 2011-07-30 09:00 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Carrier injection kinetics of P3HT/n-Si heterojunction diodes Sho Kaneko, Naoki Oyama, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) ED2011-46 |
(To be available after the conference date) [more] | ED2011-46 pp.45-49 |
| ED | 2011-07-30 09:25 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Characterization of organic solar cells made with MoO3 hole transport layers Kazuki Yoshida, Akira Kurihara, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) ED2011-47 |
(To be available after the conference date) [more] | ED2011-47 pp.51-56 |
| ED | 2011-07-30 09:50 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Study of film formability and photovoltaic properties of highly soluble thiophene oligomers Takahiko Suzuki, Kazuki Yoshida, Akira Kurihara, Kazumasa Ota, Kazuaki Sato, Yoshihiro Ohba, Fumihiko Hirose (Yamagata Univ.) ED2011-48 |
[more] | ED2011-48 pp.57-58 |
| ED | 2011-07-30 10:15 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Highly efficient dye-sensitized solar cells by dye adsorption method with high-temperature solvent Akinobu Ishida, Hiroki Yoshida, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ) ED2011-49 |
(To be available after the conference date) [more] | ED2011-49 pp.59-62 |
| ED | 2011-07-30 10:40 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Formation of a titanium oxide nanotube film on a transparent conductive oxide layer by anodization Ryota Kojima, Mohammad Maksudur Rahman, Mehdi El Fassy Fihry, Yasuo Kimura, Michio Niwano (RIEC, Tohoku Univ.) ED2011-50 |
Titanium oxide nanotube are nanomaterials which draw attention as a negative electrode for a dye-sensitized solar cell (... [more] | ED2011-50 pp.63-66 |
| ED | 2011-07-30 11:15 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Analysis of a monolithic integrated rectenna for zero bias detection by using bow-tie antenna and triple-barrier resonant tunneling diode Masahito Nakamura, Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.) ED2011-51 |
[more] | ED2011-51 pp.67-72 |
| ED | 2011-07-30 11:40 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Identification of a nonlinear equivalent circuit in triple-barrier resonant tunneling diodes by using the particle swarm optimization method Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Met. Univ.) ED2011-52 |
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] | ED2011-52 pp.73-77 |
| ED | 2011-07-30 12:05 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Quantum-Corrected Monte Carlo Analysis of Strained InAs HEMTs Jun Sato, Fumiharu Machida, Shinsuke Hara, Hiroki I. Fujishiro (TUS) ED2011-53 |
Because of their extremely high electron mobility, InAs and related materials have attracted much attention as promising... [more] | ED2011-53 pp.79-84 |
| ED | 2011-07-30 13:30 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Growth and characterization of GaSb film on Si(111) substrate using Sb template layer Hideyuki Toyota, Akinari Okabe, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.) ED2011-54 |
We prepared GaSb films on Si(111) substrate by molecular beam epitaxy (MBE). To reduce misfit dislocations which are cau... [more] | ED2011-54 pp.85-89 |
| ED | 2011-07-30 13:55 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | InSb MOS diodes on a Si(111) substrate grown by surface reconstruction ontrolled epitaxy Azusa Kadoda, Tatsuya Iwasugi, Kimihiko Nakatani, Koji Nakayama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2011-55 |
We have reported that high quality InSb films can be grown by surface reconstruction controlled epitaxy. In the growth, ... [more] | ED2011-55 pp.91-96 |
| ED | 2011-07-30 14:20 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Analysis of spin-polarized current using InSb/AlInSb resonant tunneling diodes Masanari Fujita, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.) ED2011-56 |
In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTD... [more] | ED2011-56 pp.97-102 |
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