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Technical Committee on Lasers and Quantum Electronics (LQE) (Searched in: 2008)
Search Results: Keywords 'from:2008-11-27 to:2008-11-27'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2008-11-28 10:15 |
Aichi | Nagoya Institute of Technology | Theroretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates Atsushi Yamaguchi (Kanazawa Inst. of Technology)  ED2008-172 CPM2008-121 LQE2008-116 |
Polarization properties in InGaN quantum wells on non-C AlInGaN alloy substrates are theoretically investigated. It is s... [more] | ED2008-172 CPM2008-121 LQE2008-116 pp.97-102 |
| LQE, ED, CPM | 2008-11-28 10:50 |
Aichi | Nagoya Institute of Technology | Two-Dimensional Analysis of Field-Plate Effects on Buffer-Related Lag Phenomena and Current Collapse in AlGaN/GaN HEMTs Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio (Shibaura Inst. Tech.) ED2008-173 CPM2008-122 LQE2008-117 |
[more] | ED2008-173 CPM2008-122 LQE2008-117 pp.103-108 |
| LQE, ED, CPM | 2008-11-28 11:15 |
Aichi | Nagoya Institute of Technology | Optimum Design of AlGaN/GaN HEMTs with Field Plate Ryosuke Sakai, Tomotaka Okai, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) ED2008-174 CPM2008-123 LQE2008-118 |
We have analyzed the electric field distribution for AlGaN/GaN HEMTs with various types of graded field plates using an ... [more] | ED2008-174 CPM2008-123 LQE2008-118 pp.109-114 |
| LQE, ED, CPM | 2008-11-28 11:40 |
Aichi | Nagoya Institute of Technology | Device simulation of HfO2/AlGaN/GaN MOSFET
-- effects of HfO2/AlGaN interface -- Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2008-175 CPM2008-124 LQE2008-119 |
Two-dimensional device simulations of HfO2/AlGaN/GaN MOSFETs have been carried out to investigate the operation mechanis... [more] | ED2008-175 CPM2008-124 LQE2008-119 pp.115-120 |
| LQE, ED, CPM | 2008-11-28 13:05 |
Aichi | Nagoya Institute of Technology | Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO2 Gate Insulator deposited by ALD Yuji Goda, Yoshihisa Hayashi, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2008-176 CPM2008-125 LQE2008-120 |
The AlGaN/GaN MOSFETs with HfO2 as a gate insulator deposited by ALD has been fabricated and characterized. The lower th... [more] | ED2008-176 CPM2008-125 LQE2008-120 pp.121-124 |
| LQE, ED, CPM | 2008-11-28 13:30 |
Aichi | Nagoya Institute of Technology | Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC) ED2008-177 CPM2008-126 LQE2008-121 |
We have fabricated AlGaN/GaN HEMTs with a thin p-InGaN cap layer and measured I-V characteristics of the devices. For th... [more] | ED2008-177 CPM2008-126 LQE2008-121 pp.125-130 |
| LQE, ED, CPM | 2008-11-28 13:55 |
Aichi | Nagoya Institute of Technology | An Over 100 W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier Toshihiro Ohki, Toshihide Kikkawa, Masahito Kanamura, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto, Kazukiyo Joshin, Naoki Hara (Fujitsu, Fujitsu Labs.) ED2008-178 CPM2008-127 LQE2008-122 |
[more] | ED2008-178 CPM2008-127 LQE2008-122 pp.131-136 |
| LQE, ED, CPM | 2008-11-28 14:20 |
Aichi | Nagoya Institute of Technology | Study on AlGaN/GaN HEMTs on Si(111) substrates with thick AlGaN/GaN, GaN/AlN and AlGaN/AlN multilayers Takaaki Suzue, Masanori Suzuki, Yukiyasu Nomura, Takashi Egawa (Nagoya Inst. of Tech.) ED2008-179 CPM2008-128 LQE2008-123 |
[more] | ED2008-179 CPM2008-128 LQE2008-123 pp.137-140 |
| LQE, ED, CPM | 2008-11-28 14:55 |
Aichi | Nagoya Institute of Technology | Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi (NTT) ED2008-180 CPM2008-129 LQE2008-124 |
We fabricated InxAl1-xN/Al0.38Ga0.62N/AlN/GaN hetero-structures with flat surfaces and high electron mobility. The densi... [more] | ED2008-180 CPM2008-129 LQE2008-124 pp.141-144 |
| LQE, ED, CPM | 2008-11-28 15:20 |
Aichi | Nagoya Institute of Technology | Depth profiles of strain in AlGaN/GaN heterostructures grown on si by electron backscatter diffraction technique Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda (Panasonic) ED2008-181 CPM2008-130 LQE2008-125 |
(To be available after the conference date) [more] | ED2008-181 CPM2008-130 LQE2008-125 pp.145-148 |
| LQE, ED, CPM | 2008-11-28 15:45 |
Aichi | Nagoya Institute of Technology | Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero Structure Hajime Tsukahara, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan univ.) ED2008-182 CPM2008-131 LQE2008-126 |
We have examined the effect on a two-dimensional electron gas(2DEG) in AlGaN/GaN hetero structures by using the “micro-o... [more] | ED2008-182 CPM2008-131 LQE2008-126 pp.149-154 |
| LQE, ED, CPM | 2008-11-28 16:10 |
Aichi | Nagoya Institute of Technology | Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ) ED2008-183 CPM2008-132 LQE2008-127 |
The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated... [more] | ED2008-183 CPM2008-132 LQE2008-127 pp.155-159 |
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