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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
OME, SDM 2017-04-20
16:45		 Kagoshima Tatsugochou Shougaigakushuu Center A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator
Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda (Tokyo Tech) SDM2017-4 OME2017-4		 High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effec... [more] SDM2017-4 OME2017-4
pp.15-18
SDM, OME 2016-04-08
12:00		 Okinawa Okinawa Prefectural Museum & Art Museum [Invited Talk] OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer
Shun-ichiro Ohmi, Yasutaka Maeda, Syu Furuyama, Mizuha Hiroki (Tokyo Tech) SDM2016-3 OME2016-3		 High hole mobility, higher than that of a-Si, has been reported for the organic semiconductor field-effect transistor (O... [more] SDM2016-3 OME2016-3
pp.11-15
ED 2008-03-06
15:55		 Yamagata   Influence of an interface of electrode/organics on organic FET characteristics
Tomohisa Oba, Yasuo Kimura, Michio Niwano (Tohoku Univ.) ED2007-256		 The detailed operation mechanism of organic field effect transistors (OFETs) has not been clarified yet though they have... [more] ED2007-256
pp.21-26
OME, SDM, ED 2007-04-20
15:50		 Fukuoka   Influence of Source-Drain electrodes on rubrene single-crystal FET characteristics
Tomohisa Oba, Satoshi Ogawa, Yasuo Kimura, Michio Niwano (Tohoku Univ.) ED2007-7 SDM2007-7 OME2007-7		 The detailed operation mechanism of organic field effect transistors (OFETs) has not been clarified yet though they have... [more] ED2007-7 SDM2007-7 OME2007-7
pp.33-36
 Results 1 - 4 of 4  /   
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