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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2010-12-16 14:10 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159 |
We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on I... [more] |
ED2010-159 pp.7-12 |
ED |
2010-10-26 10:20 |
Kyoto |
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Relationship between collector geometry and collector characteristics of vacuum transistor Yasuhito Gotoh, Keita Ikeda, Wataru Ohue, Hiroshi Tsuji (Kyoto Univ.) ED2010-138 |
Relationship between collector geometry and collector characteristics was studied by numerical simulation. The evaluated... [more] |
ED2010-138 pp.51-54 |
EMD |
2007-10-19 14:50 |
Kanagawa |
Keio Univ. Hiyoshi Campus |
Tribological characteristics of Cu-carbon nano tube composites materials Kuniaki Iwai, Seiichiro Hironaka (Tokyo M. Univ.) EMD2007-65 |
Sintered-materials of copper-carbon nano tube (CNT) having their various compositions were made as materials for current... [more] |
EMD2007-65 pp.55-60 |
ED |
2007-06-15 15:50 |
Toyama |
Toyama Univ. |
DC characteristics of HBT with buried SiO2 wires in collector Shinnosuke Takahashi, Tsukasa Miura, Hiroaki Yamashita (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech/JST-CREST) ED2007-37 |
The HBT with buried SiO2 in InP collector has low Base-Collector Capacitance(CBC). Therefore this HBT is expected high s... [more] |
ED2007-37 pp.33-37 |
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