| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, OPE, LQE, R, EMD | 2015-08-28 10:55 |
Aomori | Aomori-Bussankan-Asupamu | 25.8 Gbps Direct Modulation AlGaInAs DFB-LD with Low Power Consumption for 100 Gbps Application in the Data Center Naoki Nakamura, Masaaki Shimada, Go Sakaino, Takashi Nagira, Harunaka Yamaguchi, Yuichiro Okunuki, Atsushi Sugitatsu, Masayoshi Takemi (Mitsubishi Electric)  R2015-40 EMD2015-48 CPM2015-64 OPE2015-79 LQE2015-48 |
Data centers are introducing 100Gbps network systems because of data traffic increasing, and also require lower power co... [more] | R2015-40 EMD2015-48 CPM2015-64 OPE2015-79 LQE2015-48 pp.87-90 |
| LQE | 2012-12-13 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Ultra-high-speed direct modulation of AlGaInAs semi-insulating buried-heterostructure distributed-reflector lasers Takasi Simoyama, Manabu Matsuda, Shigekazu Okumura, Ayahito Uetake, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Labs.) LQE2012-124 |
AlGaInAs-MQW distributed reflector (DR) laser with semi-insulating buried-heterostructure (SI-BH) has been developed as ... [more] | LQE2012-124 pp.15-18 |
| LQE | 2012-12-13 16:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1550nm AlGaInAs/InP Widely Tunable BH Laser based on Arrayed DFB Norihiro Iwai, Masaki Wakaba, Masako Kobayakawa, Kazuaki Kiyota, Tatsuro Kurobe, Go Kobayashi, Tatsuya Kimoto, Toshikazu Mukaihara, Noriyuki Yokouchi, Akihiko Kasukawa (Furukawa Electric) LQE2012-133 |
A monolithic photonic integrated circuit (PIC) is a key technology for next-generation optical communication system, rea... [more] | LQE2012-133 pp.55-58 |
| LQE, CPM, EMD, OPE, R | 2012-08-23 14:15 |
Miyagi | Tohoku Univ. | Improvement in reliability of AlGaInAs edge-emitting laser diodes Hiroyuki Ichikawa, Yasuo Yamasaki, Nobuyuki Ikoma (SEI) R2012-27 EMD2012-33 CPM2012-58 OPE2012-65 LQE2012-31 |
High-speed and high-temperature operations are required for light emitters in optical communication systems. AlGaInAs la... [more] | R2012-27 EMD2012-33 CPM2012-58 OPE2012-65 LQE2012-31 pp.33-36 |
| LQE | 2010-12-17 13:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Encouragement Talk]
AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation Ayahito Uetake, Koji Otsubo, Manabu Matsuda (PETRA/Fujitsu/Fujitsu labs.), Shigekazu Okumura (Fujitsu labs.), Mitsuru Ekawa, Tsuyoshi Yamamoto (PETRA/Fujitsu/Fujitsu labs.) LQE2010-120 |
Because of recent significant increase of data traffic, much attention has been paid to high-speed optical transmitters.... [more] | LQE2010-120 pp.27-32 |
| LQE, OPE, OCS | 2010-10-29 15:30 |
Fukuoka | Mojiko Retro Town, Minato house | High Reliable AlGaInAs Lasers by Improved Facet-Coating Processes Hiroyuki Ichikawa, Chie Fukuda, Shinji Matsukawa, Nobuyuki Ikoma (SEI) OCS2010-83 OPE2010-119 LQE2010-92 |
AlGaInAs lasers are suitable for element devices of optical communication systems. However, degradations in forward-bias... [more] | OCS2010-83 OPE2010-119 LQE2010-92 pp.157-162 |
| CPM, OPE, R | 2010-04-16 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Reduction in Facet Temperature of AlGaInAs Edge-Emitting Lasers Hiroyuki Ichikawa, Nobuyuki Ikoma (SEI) R2010-4 CPM2010-4 OPE2010-4 |
AlGaInAs edge-emitting lasers have been expected for element devices for optical communication systems. However, increas... [more] | R2010-4 CPM2010-4 OPE2010-4 pp.17-22 |
| LQE | 2009-12-11 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Relationship between Facet Stress and Reliability of Edge-Emitting AlGaInAs Laser Diodes Hiroyuki Ichikawa, Akiko Kumagai, Naoya Kono, Shinji Matsukawa, Chie Fukuda, Keiko Iwai, Nobuyuki Ikoma (Sumitomo Electric Industries, Ltd.) LQE2009-142 |
Although facet stress is one of the important parameters in edge-emitting laser diodes (LDs), the relationship between f... [more] | LQE2009-142 pp.19-23 |
| LQE | 2009-12-11 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation Ayahito Uetake, Koji Otsubo, Manabu Matsuda (OITDA/Fujitsu/Fujitsu Laboratories), Shigekazu Okumura (Fujitsu Laboratories), Mitsuru Ekawa, Tsuyoshi Yamamoto (OITDA/Fujitsu/Fujitsu Laboratories) LQE2009-148 |
Because of recent significant increase of data traffic, much attention has been paid to high-speed optical transmitters.... [more] | LQE2009-148 pp.51-56 |
| LQE, OPE | 2009-06-19 16:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1.3um AlGaInAs/InP DFB Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer Hideki Yagi, Yutaka Onishi, Yukihiro Tsuji, Hiroyuki Ichikawa, Hiroyuki Yoshinaga, Toshio Nomaguchi, Kenji Hiratsuka, Katsumi Uesaka (Sumitomo Electric Ind, LTD.) OPE2009-27 LQE2009-30 |
1.3um AlGaInAs/InP distributed feedback (DFB) lasers with the ridge-waveguide structure buried by the benzocyclobutene (... [more] | OPE2009-27 LQE2009-30 pp.59-62 |
| OPE, CPM, R | 2009-04-17 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Electrostatic-Discharge Tolerance of AlGaInAs Laser Diodes Hiroyuki Ichikawa, Chie Fukuda, Shinji Matsukawa, Kotaro Hamada, Nobuyuki Ikoma, Takashi Nakabayashi (Sumitomo Electric Industries, Ltd.) R2009-2 CPM2009-2 OPE2009-2 |
This is a report on electrostatic discharge (ESD)-induced degradation of AlGaInAs/InP laser diodes. We found that the do... [more] | R2009-2 CPM2009-2 OPE2009-2 pp.7-10 |
| LQE | 2007-12-07 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High-Power 10-Gb/s Semi-Cooled Operation of AlGaInAs Electroabsorption Modulator Integrated λ/4-Shifted DFB Laser Kan Takada, Suguru Akiyama, Manabu Matsuda, Shigekazu Okumura, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Lab.) LQE2007-114 |
High-power 10-Gb/s semi-cooled operation was attained for AlGaInAs electroabsorption modulator integrated AlGaInAs $\lam... [more] | LQE2007-114 pp.7-10 |
| OPE | 2006-02-17 16:05 |
Tokyo | Uncooled AlGaInAs-MQW-FP-LD with Ruthenium doped semi-insulating InP buried hetero-structure Kiyotaka Tsuruoka, Ryuji Kobayashi, Koichi Naniwae, Keiichi Tokutome, , Tomoaki Kato (NEC) |
We have developed the first 1.3-μm AlGaInAs-MQW-FP-LD with ruthenium (Ru) doped InP buried heterostructure by narrow-str... [more] | OPE2005-153 pp.41-46 |
|
| LQE, OCS, OPE | 2004-11-04 16:15 |
Fukuoka | Kyushu Institute of Technology | 10 Gb/s Uncooled Electroabsorption Modulator Integrated Light Source with AlGaInAs-MQW Structure by Narrow-Stripe Selective MOVPE Hiroaki Chida, Kenichiro Yashiki, Kiyotaka Tsuruoka, Ryuji Kobayashi, Shinya Sudo, Kenji Sato, Tomoaki Kato, Koji Kudo (System Devices Research Labs, NEC Corp.) |
We have developed 1.3-m AlGaInAs buried hetero-structure electro-absorption modulator integrated light source by... [more] | OCS2004-89 OPE2004-154 LQE2004-98 pp.39-42 |
[Return to Top Page]