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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-07-04
16:20		 Aichi VBL, Nagoya Univ. Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering
Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-67		 Resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes have been studided in comp... [more] SDM2011-67
pp.97-102
ED, SDM 2010-06-30
14:55		 Tokyo Tokyo Inst. of Tech. Ookayama Campus The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure
Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2010-57 SDM2010-58		 Resistive switching of Metal-Insulator-Metal (MIM) consisting of a MOCVD TiO2 layer sandwiched with Pt
electrodes has b... [more]		 ED2010-57 SDM2010-58
pp.31-36
SDM 2010-06-22
16:50		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo The influence of Y incorporation into TiO2 on Electronic States and Resistive Switching Characteristics
Akio Ohta, Yuta Goto, Mohd Fairuz Kamarulzaman, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2010-47		  [more] SDM2010-47
pp.79-84
SDM 2009-06-19
17:00		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Characterization of Chemical Bonding Features and Electronic States at TiO2/Pt Interface
Yuta Goto, Daisuke Kanme, Akio Ohta, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima University) SDM2009-44		 We focused on the interfacial reaction between TiO2 and Pt to gain a better understanding of the mechanism of resistive ... [more] SDM2009-44
pp.99-103
 Results 1 - 4 of 4  /   
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