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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EID, SDM, ITE-IDY [detail] |
2018-12-25 11:00 |
Kyoto |
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Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate Hiroki Utsumi (Tohoku Gakuin Univ.), Kuninori Kitahara, Shinya Tsukada (Shimane Univ.), Hitoshi Suzuki, Akito Hara (Tohoku Gakuin Univ.) EID2018-4 SDM2018-77 |
Polycrystalline-germanium (poly-Ge) thin-film transistor (TFT) with double gate (DG) structure was fabricated via metal ... [more] |
EID2018-4 SDM2018-77 pp.1-4 |
SDM, OME |
2018-04-07 11:20 |
Okinawa |
Okinawaken Seinen Kaikan |
[Invited Talk]
High Performance and Functional Group-Ⅳ Thin-Film Transistors Akito Hara, Hiroki Utsumi, Naoki Nishiguchi, Ryo Miyazaki (Tohoku Gakuin Univ.) SDM2018-5 OME2018-5 |
We have fabricated self-aligned planar double-gate (DG) or self-aligned planar four-terminal (4T) polycrystalline german... [more] |
SDM2018-5 OME2018-5 pp.19-24 |
SDM, EID |
2017-12-22 15:30 |
Kyoto |
Kyoto University |
Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.) EID2017-24 SDM2017-85 |
Germanium tin (GeSn) is known as a new semiconductor device material. We used metal induced crystallization (MIC) using ... [more] |
EID2017-24 SDM2017-85 pp.67-70 |
OME, SDM |
2017-04-20 13:00 |
Kagoshima |
Tatsugochou Shougaigakushuu Center |
Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare Hiroki Utsumi, Taisei Sasaki, Shunya Sekiguchi, Shoya Takeuchi, Akito Hara (Tohoku Gakuin Univ.) SDM2017-1 OME2017-1 |
Flexible devices and wearable devices are receiving more attention due to their contributions in realizing the Internet ... [more] |
SDM2017-1 OME2017-1 pp.1-4 |
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