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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, THz | 2018-12-17 16:35 |
Miyagi | RIEC, Tohoku Univ. | Direct determination of the interlayer van der Waals bonding force in graphene by thermal decomposition of SiC Tadao Tanabe, Tang Chao, Yoshiki Fuse, Kenta Sugawara, Takahiro Komiyama, Yohei Sato, Hirokazu Fukidome, Taiichi Otsuji, Yutaka Oyama (Tohoku Univ.)  ED2018-59 |
Two-dimensional (2D) layered materials have attracted much interest because of their unique crystallographic structure a... [more] | ED2018-59 pp.25-26 |
| ED, THz | 2017-12-19 15:10 |
Miyagi | RIEC, Tohoku Univ | Temperature Dependence of the Transconductance of a Dual Gate Graphene Field Effect Transistor Kenta Sugawara, Takayuki Watanabe, Deepika Yadav, Takahiro Komiyama, Yoshiki Fuse (Tohoku Univ.), Maxim Ryzhii (Aizu Univ.), Victor Ryzhii, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2017-91 |
We report on experimental observation of temperature characteristics of a dual gate graphene field effect transisor (DG-... [more] | ED2017-91 pp.73-76 |
| ED | 2016-12-20 09:50 |
Miyagi | RIEC, Tohoku Univ | Terahertz response of nanocarbon materials Takuya Miyajima (Hokkaido Univ.), Hisashi Sugime (Waseda Univ.), Kenta Sugawara, Takayuki Watanabe, Taiichi Otsuji (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.) ED2016-89 |
Research on new materials and structures is important to devise novel terahertz (THz) semiconductor devices. We focus on... [more] | ED2016-89 pp.49-54 |
| CS, OCS (Joint) |
2016-01-22 09:50 |
Kagoshima | Kagoshima University, Korimoto Campus, Inamori Auditorium | Sub-THz Photonic Frequency Conversion Using Graphene and InP-Based Transistors for Future Fully Coherent Access Network Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Ryzhii Victor, Katsumi Iwatsuki (Tohoku Univ.), Shigeru Kuwano, Jun-ichi Kani, Jun Terada (NTT), Taiichi Otsuji (Tohoku Univ.) OCS2015-95 |
The feasibility of graphene-channel field effect transistors (G-FETs) and InP based high electron mobility transistors (... [more] | OCS2015-95 pp.41-46 |
| ED | 2015-12-21 15:00 |
Miyagi | RIEC, Tohoku Univ | Extraction of intrinsic parameters in graphene-channel FET Gen Tamamushi, Kenta Sugawara, Akira Sato, Keiichiro Tashima, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2015-95 |
We fabricate and characterize the graphene-channel FETs (G-FETs) made of high-quality epitaxial graphene (EG) grown by t... [more] | ED2015-95 pp.25-30 |
| ED | 2014-12-22 14:10 |
Miyagi | Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2014-100 |
We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electr... [more] | ED2014-100 pp.9-13 |
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