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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2021-01-29 13:00 |
Online |
Online |
DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS) ED2020-31 MW2020-84 |
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] |
ED2020-31 MW2020-84 pp.22-25 |
SDM |
2019-06-21 16:45 |
Aichi |
Nagoya Univ. VBL3F |
Chemical Structure and Electronic States of HfSiOx/GaN(0001) Akio Ohta, Katunori Makihara (Nagoya Univ.), Toshihide Nabatame (NIMS), Koji Shiozaki, Seiichi Miyazaki (Nagoya Univ.) SDM2019-35 |
A HfSiOx layer with different Hf/(Hf+Si) composition ratio was formed on wet chemically-cleaned GaN(0001) using ALD, and... [more] |
SDM2019-35 pp.47-51 |
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