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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2007-04-12
11:10		 Oita   [Invited Talk] A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current
Akira Kotabe, Satoru Hanzawa (Hitachi), Naoki Kitai (Hitachi ULSI), Kenichi Osada, Yuichi Matsui, Nozomu Matsuzaki, Norikatsu Takaura (Hitachi), Masahiro Moniwa (Renesas), Takayuki Kawahara (Hitachi) ICD2007-5		 An experimental 512-kB embedded Phase Change Memory (PCM) is developed in a 0.13-μm 1.5-V CMOS technology. Three circuit... [more] ICD2007-5
pp.23-28
ICD, ITE-CE 2006-01-26
10:30		 Tokyo Kikai-Shinko-Kaikan Bldg. Phase Change RAM Operated with 1.5-V CMOS as Low Cost Embedded Memory
Satoru Hanzawa, Kenichi Osada, Takayuki Kawahara, Riichiro Takemura (Hitachi CRL), Naoki Kitai (Hitachi ULSI), Norikatsu Takaura, Nozomu Matsuzaki, Kenzo Kurotsuchi (Hitachi CRL), Hiroshi Moriya (Hitachi MERL), Masahiro Moniwa (Renesas) 		This paper describes a phase change (PC) RAM operated at the lowest possible voltage, 1.5 V, with a CMOS memory array, u... [more] ICD2005-206
pp.7-12
ICD 2005-04-15
14:00		 Fukuoka   Analysys of SRAM neutron-Induced Errors Based on the Consideration of Both Charge-Collection and Parasitic-BipolarFailure Modes
Kenichi Osada (Hitachi), Naoki Kitai (Hitachi ULSI), Shiro Kamohara (Renesas), Takayuki Kawahara (Hitachi) 		This paper describes an investigation of the upsetting of values in cells hit by alpha particles or neutrons, in which t... [more] ICD2005-18
pp.31-36
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