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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-06-25
16:35		 Aichi Nagoya Univ. VBL3F XPS Study of Silicate Formation and Electrical Dipole at Y2O3/SiO2 Interfaces
Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2018-26		  [more] SDM2018-26
pp.47-51
SDM 2017-06-20
14:35		 Tokyo Campus Innovation Center Tokyo Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements
Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-25		  [more] SDM2017-25
pp.19-23
SDM 2016-06-29
14:10		 Tokyo Campus Innovation Center Tokyo XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface
Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2016-40		 An evaluation method for estimating the valence band (VB) top from the vacuum level (VL) for semiconductors and dielectr... [more] SDM2016-40
pp.43-47
SDM 2016-06-29
14:45		 Tokyo Campus Innovation Center Tokyo Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD
NguyenXuan Truyen, Nobuyuki Fujimura, Daichi Takeuchi, Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ.) SDM2016-41		 SiO2 thin films have been deposited on H-terminated Si surface by remote O2 plasma enhanced CVD (O2-RPCVD) using SiH4 an... [more] SDM2016-41
pp.49-52
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