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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2024-01-31
13:05		 Tokyo KIT Toranomon Graduate School
(Primary: On-site, Secondary: Online)		 [Invited Talk] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition
Kenji Ito, Tetsuo Narita, Hiroko Iguchi, Shiro Iwasaki, Daigo Kikuta (Toyota Central R&D), Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda (Nagoya Univ.) SDM2023-75		 Polarization engineering by AlN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstr... [more] SDM2023-75
pp.5-8
ICD 2007-04-13
13:50		 Oita   Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention
Hiroshi Sunamura, Taeko Ikarashi, Ayuka Morioka, Setsu Kotsuji, Makiko Oshida, Nobuyuki Ikarashi, Shinji Fujieda, Hirohito Watanabe (NEC) ICD2007-15		 For retention improvement in scaled SONOS-type non-volatile memory, deep traps with controllable density were formed by ... [more] ICD2007-15
pp.83-88
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