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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, ED, CPM |
2023-11-30 13:05 |
Shizuoka |
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AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech) ED2023-14 CPM2023-56 LQE2023-54 |
A high-electron-mobility transistor (HEMT) structure with a strain-engineered quaternary AlGaInN barrier layer, a thin u... [more] |
ED2023-14 CPM2023-56 LQE2023-54 pp.1-5 |
ED, CPM, LQE |
2021-11-26 14:55 |
Online |
Online |
High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44 |
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] |
ED2021-32 CPM2021-66 LQE2021-44 pp.79-82 |
ED, CPM, LQE |
2021-11-26 16:25 |
Online |
Online |
Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.) ED2021-35 CPM2021-69 LQE2021-47 |
We utilized photo-electrochemical (PEC) etching for fabrication of recessed-gate AlGaInN/AlGaN MIS HFETs. The PEC reacti... [more] |
ED2021-35 CPM2021-69 LQE2021-47 pp.91-94 |
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