IEICE Technical Committee Submission System
Conference Schedule		 Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-11-10
10:30		 Tokyo
(Primary: On-site, Secondary: Online)		 [Invited Talk] Simulation of graphene surface plasmon propagation based on tight-binding method and finite-difference time-domain method
Satofumi Souma, Shota Ogisawa (Kobe Univ) SDM2023-68		 The use of surface plasmons in graphene is attracting attention in order to make terahertz band antennas smaller and mor... [more] SDM2023-68
pp.26-30
SDM 2022-11-10
16:15		 Online Online [Invited Talk] A study on the development of nanoscale device simulation method based on the use of gate-type quantum computing algorithm
Satofumi Souma, Shingo Matsuo, Takuya Ishibashi (Kobe Univ.) SDM2022-69		 We present an implementation study of gate-type quantum computing algorithms for the
purpose of semiconductor device s... [more]		 SDM2022-69
pp.23-27
SDM 2022-11-11
16:15		 Online Online [Invited Talk] SISPAD2022 Review
Satofumi Souma (Kobe Univ.) SDM2022-77		 The 27th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)
was held on Septe... [more]		 SDM2022-77
pp.61-67
SDM 2021-11-12
15:45		 Online Online [Invited Talk] Acceleration of nonequilibrium Green's function simulation for nanoscale devices by applying machine-learning model
Satofumi Souma (Kobe Univ.) SDM2021-65		 In device simulation based on the non-equilibrium Green's function method, the calculation of the non-equilibrium space ... [more] SDM2021-65
pp.66-71
SDM 2015-11-06
11:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Simulation of Dirac Electron Engineering Device Using Strained Graphene
Satofumi Souma, Miku Tanaka, Keisuke Ichihara, Shotaro Sakoda, Kenji Sasaoka, Matsuto Ogawa (Kobe Univ.) SDM2015-89		 MOSFET has been scaled down according to the Moore's law. As the channel length gets close to the nanometer-size, howeve... [more] SDM2015-89
pp.29-34
QIT
(2nd)		 2011-11-21
14:40		 Osaka Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) [Poster Presentation] Theory of Josepshon pi-junction through a ferromagnetic-insulator
Shuhei Nakamura, Satofumi Souma, Matsuto Ogawa (Kobe Univ), Shiro Kawabata (AIST) 		We predict an anomalous 0-π transition in Josephson junctions with a ferromagnetic insulator (FI).
Previously it was f... [more]
SDM, VLD 2006-09-26
15:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Quantum Electron Transport Modeling in Nano-Scale Devices Based on Multiband Non-Equilibrium Green's Funtion Method
Helmy Fitriawan, Satofumi Souma, Matsuto Ogawa, Tanroku Miyoshi (Kobe Univ.) 		 [more] VLD2006-49 SDM2006-170
pp.59-63
 Results 1 - 7 of 7  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan