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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2009-11-20
14:00		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) High breakdown voltage of AlGaN/GaN HEMTs on Si substrates
Takaaki Suzue, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) ED2009-155 CPM2009-129 LQE2009-134		 We have studied the breakdown characteristics of thick AlGaN/GaN HEMTs on Si substrate with multilayer structure. The br... [more] ED2009-155 CPM2009-129 LQE2009-134
pp.129-132
LQE, ED, CPM 2008-11-28
14:20		 Aichi Nagoya Institute of Technology Study on AlGaN/GaN HEMTs on Si(111) substrates with thick AlGaN/GaN, GaN/AlN and AlGaN/AlN multilayers
Takaaki Suzue, Masanori Suzuki, Yukiyasu Nomura, Takashi Egawa (Nagoya Inst. of Tech.) ED2008-179 CPM2008-128 LQE2008-123		  [more] ED2008-179 CPM2008-128 LQE2008-123
pp.137-140
CPM, ED, LQE 2007-10-12
10:15		 Fukui Fukui Univ. Study on AlGaN/GaN HEMT structures on 4-inch Si (111) substrates with thick buffer layers
Yutaka Terada, Takaaki Suzue, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.) ED2007-168 CPM2007-94 LQE2007-69		  [more] ED2007-168 CPM2007-94 LQE2007-69
pp.63-66
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