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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2021-11-26
13:25		 Online Online Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy
Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) ED2021-29 CPM2021-63 LQE2021-41		 Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning inter... [more] ED2021-29 CPM2021-63 LQE2021-41
pp.67-70
SDM 2013-10-17
14:00		 Miyagi Niche, Tohoku Univ. [Invited Talk] Technological Trend of SiC Power Devices
Takashi Shinohe (TOSHIBA) SDM2013-88		 (To be available after the conference date) [more] SDM2013-88
pp.1-4
EE 2008-07-25
13:00		 Hokkaido   [Special Talk] Progress in Power Semiconductor Devices
Takashi Shinohe (Toshiba) EE2008-28		 Power semiconductor devices are widely used as energy saving devices in various power electronics apparatus, such as inv... [more] EE2008-28
pp.95-100
EE 2005-09-09
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Special Talk] Progress in SiC power semiconductor devices
Takashi Shinohe (Toshiba) 		Silicon carbide (SiC) has an electric breakdown field ten times higher than that of silicon (Si) and is expected to be a... [more] EE2005-32
pp.1-6
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