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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2010-07-30
09:30		 Hokkaido Michino-Eki Shari Meeting Room Low temperature of deposition of ZrNx film using radical reaction
Masaru Sato, Mayumi B. Takeyama (kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (kitami Inst. of Tech.) CPM2010-36		 Recently, an increase in the integration density of the Si-ULSI system is realized in the 3-D packaging
technology. A t... [more]		 CPM2010-36
pp.29-34
CPM 2009-08-11
10:50		 Aomori Hirosaki Univ. Properties of ZrBx Thin Film Applicable to Cu Interconnects in Si-ULSI
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2009-43		 We have examined characteristics of ZrB2 films and found a peculiar property that the resistivity of the film depends on... [more] CPM2009-43
pp.51-55
CPM 2009-08-11
11:15		 Aomori Hirosaki Univ. Effectiveness of New Deposition Method for Barrier Metal Applicable to Through Silicon Via -- Properties of ZrNx Film Formed at Low Temperature --
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2009-44		 A low process temperature as low as 200°C is one of the most important requirements for the metallization technology of ... [more] CPM2009-44
pp.57-60
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