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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2009-06-19
15:10		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics
Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38		 We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] SDM2009-38
pp.67-70
ICD, SDM 2008-07-17
09:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations
Motoyuki Sato, Yoshihiro Sugita, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete) SDM2008-128 ICD2008-38		 Using (110) substarate is one of promissing candidate for pMOSTET boost technology. (110) surface shows not only higher ... [more] SDM2008-128 ICD2008-38
pp.1-6
ICD, SDM 2008-07-18
14:40		 Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication of Ultra Shallow Junction and Improvement of Metal Gate High-k CMOS Performance by FSP-FLA (Flexibly-Shaped-Pulse Flash-Lamp-Annealing) Technology
Takashi Onizawa, Shinichi Kato, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (selete) SDM2008-146 ICD2008-56		 We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ... [more] SDM2008-146 ICD2008-56
pp.103-108
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