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Committee Date Time Place Paper Title / Authors Abstract Paper #
EMD, LQE, OPE, CPM, R 2014-08-21
16:00		 Hokkaido Otaru Economy Center Fabrication and High-Temperature Operation of InAs/GaAs Quantum Dot Lasers on Silicon by Wafer Bonding
Katsuaki Tanabe, Yasuhiko Arakawa (Univ. of Tokyo) R2014-32 EMD2014-37 CPM2014-52 OPE2014-62 LQE2014-36		 We are developing high-performance on-chip light sources utilizing semiconductor quantum dots towards the realization of... [more] R2014-32 EMD2014-37 CPM2014-52 OPE2014-62 LQE2014-36
pp.51-54
LQE 2012-12-13
13:50		 Tokyo Kikai-Shinko-Kaikan Bldg. [Encouragement Talk] Advances in Quantum Dot Lasers on Silicon Substrates by Wafer Bonding
Katsuaki Tanabe, Yasuhiko Arakawa (Univ. Tokyo) LQE2012-128		 III-V semiconductor compound light sources monolithically integrated on Si substrates or waveguides would be promising f... [more] LQE2012-128
pp.31-33
CPM, OPE, LQE, EMD 2011-08-25
16:25		 Hokkaido Hokkaido Univ. 1.3 um InAs/GaAs Quantum Dot Lasers on Si Substrates by Direct Semiconductor Bonding
Katsuaki Tanabe, Katsuyuki Watanabe, Yasuhiko Arakawa (Univ. Tokyo) EMD2011-42 CPM2011-86 OPE2011-77 LQE2011-40		  [more] EMD2011-42 CPM2011-86 OPE2011-77 LQE2011-40
pp.53-58
EMD, OPE, LQE, CPM 2010-08-27
16:55		 Hokkaido Chitose Arcadia Plaza 1.3um InAs/GaAs Quantum Dot Lasers on Si Substrates by Wafer Bonding
Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko Arakawa (Univ. of Tokyo.) EMD2010-59 CPM2010-75 OPE2010-84 LQE2010-57		 III-V semiconductor compounds light sources monolithically formed on Si substrates or waveguides would be promising for ... [more] EMD2010-59 CPM2010-75 OPE2010-84 LQE2010-57
pp.153-156
 Results 1 - 4 of 4  /   
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