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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2017-10-26
10:50
Miyagi Niche, Tohoku Univ. Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2017-57
The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO... [more] SDM2017-57
pp.39-44
SDM 2015-06-19
15:15
Aichi VBL, Nagoya Univ. Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method
Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] SDM2015-51
pp.69-73
SDM 2014-06-19
11:45
Aichi VBL, Nagoya Univ. Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer by ALD method
Toshihide Nabatame, Akihiko Ohi (NIMS), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.), Toyohiro Chikyow (NIMS) SDM2014-49
We studied characteristics of the p-Si/SiO2/Al2O3-TL/(Ta/Nb)Ox-CTL/Al2O3-BL/Pt capacitors, fabricated by using ALD at 20... [more] SDM2014-49
pp.31-35
SDM 2013-06-18
10:35
Tokyo Kikai-Shinko-Kaikan Bldg. Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge
Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS) SDM2013-48
As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electr... [more] SDM2013-48
pp.25-28
SDM 2012-06-21
12:15
Aichi VBL, Nagoya Univ. Evaluation of Al atoms as a function of annealing temperature for (TaC)1-xAlx/HfO2 gate stack
Masayuki Kimura (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi, Toshihiro Narushima, Toyohiro Chikyow (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.)
Al-incorporated TaC ((TaC)1-xAlx) (x=0-0.33)) thin films were used as gate electrode to control Vfb for HfO2 MOS capacit... [more]
SDM 2011-07-04
15:00
Aichi VBL, Nagoya Univ. The effect of oxidation and reduction annealing on Vfb shift in ITO/HfO2 MOS capacitors
Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.), Toyohiro Chikyow (NIMS) SDM2011-64
We investigated effect of oxidation and reduction annealing on Vfb for In0.9Sn0.1 (ITO)/HfO2 (4.9 nm)/SiO2 MOS capacitor... [more] SDM2011-64
pp.81-85
SDM 2006-06-21
14:55
Hiroshima Faculty Club, Hiroshima Univ. Characterization of open volumes in high-k gate dielectrics by using monoenergetic positron beams
Akira Uedono, T. Otsuka, K. Ito, K. Shiraishi, Kikuo Yamabe (Univ. of Tsukuba), Seiichi Miyazaki (Hiroshima Univ.), Naoto Umezawa, Toyohiro Chikyow (NIMS), Toshiyuki Ohdaira, R. Suzuki (AIST), Seiji Inumiya, Satoshi Kamiyama (Selete), Yasushi Akasaka (TEL), Yasuo Nara (Selete), Keisaku Yamada (Waseda Uni.)
 [more] SDM2006-46
pp.25-30
SDM 2006-06-21
16:00
Hiroshima Faculty Club, Hiroshima Univ. Electric Properties on High-k Capacitors with Work-Function Tuned Metal Electrodes
Kenji Ohmori (NIMS), Parhat Ahmet (TIT), Kenji Shiraishi (Univ. of Tsukuba), Heiji Watanabe (Osaka Univ.), Yasushi Akasaka (Selete), Kikuo Yamabe (Univ. of Tsukuba), Michiko Yoshitake (NIMS), K. S. Chang, M. L. Green (NIST), Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.), Toyohiro Chikyow (NIMS)
 [more] SDM2006-48
pp.37-41
 Results 1 - 8 of 8  /   
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