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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2010-01-14 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density Masayuki Yamada, Takafumi Uesawa, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-182 MW2009-165 |
We investigated the relationship between the emitter charging time and inverse current of heterojunction bipolar transis... [more] |
ED2009-182 MW2009-165 pp.43-48 |
ED |
2009-06-12 10:20 |
Tokyo |
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In-situ etching by CBr4 in InP heterojunction bipolar transistors with buried SiO2 wire Naoaki Takebe, Hiroaki Yamashita, Shinnosuke Takahashi, Hisashi Saito, Takashi Kobayashi, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-46 |
In order to obtain high-speed InP heterojunction bipolar transistors (HBTs), it is necessary to reduce the base-collecto... [more] |
ED2009-46 pp.51-55 |
MW, ED |
2009-01-15 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor Takafumi Uesawa, Masayuki Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2008-212 MW2008-177 |
Abstract We report a Monte Carlo analysis of base transit time in ultra-thin and heavily-doped InP/InGaAs HBT’s. In ultr... [more] |
ED2008-212 MW2008-177 pp.83-88 |
ED, MW |
2008-01-17 11:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Improvement in reliability of InGaP/GaAs HBT's by ledge passivation Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148 |
Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced... [more] |
ED2007-217 MW2007-148 pp.61-66 |
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