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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-06-26
12:10
Hiroshima Hiroshima Univ. (Res. Inst. of Nanodevices) Evaluations of Crystalline Structures and Ferroelectricity of Zr/Hf-Multilayer Structures Formed by Thermal Oxidization
Yunosuke Sano (Nagoya Univ.), Taoka Noriyuki (AIT), Makihara Katsunori (Nagoya Univ.), Ohta Akio (Hukuoka Univ.), Miyazaki Seiichi (Nagoya Univ.) SDM2023-31
The orthorhombic (O) phase of Hf oxides shows ferroelectricity even in ultra-thin films of ~5.0 nm.
However, there are... [more]
SDM2023-31
pp.15-18
SDM 2022-06-21
14:00
Aichi Nagoya Univ. VBL3F Impacts of Surface Orientation of Si Substrate on Crystalline Structures and Chemical Composition of Hf-oxide Layers Formed by Post Oxidation
Wataru Yasuda, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2022-26
Orthorhombic (O)Hf-based oxide exhibits ferroelectricity even in a thin film with a thickness of 5-10 nm. However, there... [more] SDM2022-26
pp.9-12
SDM 2019-01-29
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] SDM2018-81
pp.1-4
SDM 2019-01-29
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors
Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo) SDM2018-82
Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-F... [more] SDM2018-82
pp.5-8
OME 2011-10-14
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. B3-2 Correlation between FE-TSC and dielectric properties observed in (BEDT-TTF)(TCNQ) crystalline FET
Mitsutoshi Hanada, Masatoshi Sakai, Masato Ishiguro (Chiba Univ.), Ryosuke Matsubara (NAIST), Hiroshi Yamauchi (Chiba Univ.), Masakazu Nakamura (NAIST), Kazuhiro Kudo (Chiba Univ.) OME2011-53
We have measured thermally stimulated current (TSC) attributed to relaxation of spontaneous polarization induced by poli... [more] OME2011-53
pp.27-30
OME 2010-10-22
16:30
Tokyo NTT Musashino R&D Center Carrier conduction and crystal structure of organic Mott insulator (BEDT-TTF)(TCNQ)
Masato Ishiguro, Yuya Ito, Tomoki Takahara, Mitsutoshi Hanada, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2010-54
Organic Mott insulator (BEDT-TTF)(TCNQ) is a charge transfer complex composed of bis(ethylenedithio)-tetrathiafulvalene ... [more] OME2010-54
pp.41-45
OME 2009-09-03
14:15
Tokyo Kikai-Shinko-Kaikan Bldg Correlation between carrier conduction and dielectric properties of (BEDT-TTF)(TCNQ) crystalline FET around phase transitions
Masato Ishiguro, Yuya Ito, Tomoki Takahara, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2009-39
Organic Mott insulator (BEDT-TTF)(TCNQ) is a charge transfer complex composed of BEDT-TTF (donor molecule) and TCNQ (acc... [more] OME2009-39
pp.19-22
 Results 1 - 7 of 7  /   
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