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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-11-06
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device simulation -- More than 30 years in Toshiba's TCAD --
Naoyuki Shigyo (Toshiba) SDM2014-100		 TCAD is one of important tools for designing a semiconductor device. As a virtual fabrication, TCAD contributes to reduc... [more] SDM2014-100
pp.25-30
SDM 2009-06-19
11:20		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Electrical Properties of Ge MIS Interface Defects
Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo) SDM2009-30		 The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS int... [more] SDM2009-30
pp.21-26
ED, CPM, SDM 2006-05-19
14:00		 Aichi VBL, Toyohashi University of Technology Estimation of trap parameters from a slow component of excess carrier decay curves
Masaya Ichimura (Nagoya Inst. Technol.) 		In the photoconductivity decay measurement, a slow component is often observed, especially for wide-bandgap materials, e... [more] ED2006-38 CPM2006-25 SDM2006-38
pp.101-106
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