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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2016-12-13
13:00
Kyoto Kyoto University Growth and application of corundum-structured n- and p-type wide band gap oxide semiconductors
Kentaro Kaneko (Kyoto Univ.), Toshimi Hitora (FLOSFIA INC.), Shizuo Fujita (Kyoto Univ.) ED2016-74 CPM2016-107 LQE2016-90
Electronic carrier concentrations in corundum-structured α-In2O3 thin films decreased by being doped with a Mg ion. A M... [more] ED2016-74 CPM2016-107 LQE2016-90
pp.85-88
OME, OPE 2014-11-21
15:10
Tokyo   Fabrication of NiO-based p-type photo electrodes for high-voltage dye sensitized tandem solar cell
Akiumi Oba, Hiroshi Yamauchi, Shigekazu Kuniyoshi, Masatoshi Sakai, Masaaki Iizuka (Chiba Univ.), Yasuyuki Watanabe (Tokyo Univ. of Science, Suwa), Kazuhiro Kudo (Chiba Univ.) OME2014-52 OPE2014-132
The hydrogen generation using electrolysis of water is the most expected way of energy production due to unlimited solar... [more] OME2014-52 OPE2014-132
pp.29-33
CPM 2010-10-28
16:40
Nagano   Structure and electric properties of RF-sputtered p-type nickel oxide thin films
Atsushi Nagata, Kazuo Uchida, Atsushi Koizumi, Hiroshi Ono, Shinji Nozaki (UEC) CPM2010-96
NiOx as a transparent oxide semiconductor has been known long to show an intrinsic p-type conductivity although most of ... [more] CPM2010-96
pp.27-31
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