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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2018-11-08 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] |
SDM2018-66 pp.11-16 |
ICD, SDM, ITE-IST [detail] |
2016-08-03 15:30 |
Osaka |
Central Electric Club |
Performance Enhancement of Tunnel FET by Negative Capacitance Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, Toshiro Hiramoto (Univ. of Tokyo) SDM2016-68 ICD2016-36 |
IoT devices in a sensor network require a new energy-efficient transistor which operates at ultralow voltage and power e... [more] |
SDM2016-68 ICD2016-36 pp.127-130 |
SDM |
2016-06-29 10:40 |
Tokyo |
Campus Innovation Center Tokyo |
[Invited Lecture]
Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-34 |
This paper discusses a design of fully depleted silicon-on-insulator field-effect transistors with ferroelectric gate in... [more] |
SDM2016-34 pp.9-13 |
SDM |
2016-01-28 15:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage Jiro Ida (Kanazawa Institute of Technology) SDM2015-127 |
We have proposed the new type super steep subthreshold slope (SS) device of the PN-body tied SOI FET. The N region is in... [more] |
SDM2015-127 pp.31-34 |
ICD, SDM |
2014-08-04 13:05 |
Hokkaido |
Hokkaido Univ., Multimedia Education Bldg. |
[Invited Talk]
Research progress in steep slope devices and technologies to enhance ON current in TFETs Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-67 ICD2014-36 |
Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recen... [more] |
SDM2014-67 ICD2014-36 pp.29-34 |
SDM, ICD |
2013-08-01 09:00 |
Ishikawa |
Kanazawa University |
Analysis of Steep Subthreshold Slope Characteristics in SOI MOSFET Takayuki Mori, Jiro Ida (Kanazawa Inst. of Tech.) SDM2013-65 ICD2013-47 |
We have found out that the steep Subthreshold Slope (SS) appears in the Floating-Body (FB) and the Body-Tied (BT) SOI MO... [more] |
SDM2013-65 ICD2013-47 pp.1-6 |
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