IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 108, Number 236

Silicon Device and Materials

Workshop Date : 2008-10-09 - 2008-10-10 / Issue Date : 2008-10-02

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Table of contents

SDM2008-149
Evaluation of Post Cu-CMP Cleaning Chemicals for Non-Porous Ultra Low-k Dielectric Fluorocarbon Film
Xun Gu, Takenao Nemoto, Akinobu Teramoto, Takashi Ito, Tadahiro Ohmi (Tohoku Univ.)
pp. 1 - 6

SDM2008-150
Investigation of Novel End-Point-Detection for Ta/Cu CMP
Xun Gu, Takenao Nemoto (Tohoku Univ.), Ara Philipossian, Yasa Adi Sampurno (Univ. of Arizona/Araca), Jiang Cheng (Araca), Yun Zhuang (Univ. of Arizona/Araca), Akinobu Teramoto, Takashi Ito, Tadahiro Ohmi (Tohoku Univ.)
pp. 7 - 12

SDM2008-151
Planarization of CW laser crystallized Si thin films by chemical mechanical polishing using slurry with ethyl alcohol
Masayuki Numata, Shin-Ichiro Kuroki, Shuntaro Fujii, Koji Kotani, Takashi Ito (Tohoku Univ.)
pp. 13 - 16

SDM2008-152
Development of Multi-Scale Simulator for lifetime of Interconnect and its application to Cu lines
Hideyuki Tsuboi, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A Del Calpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 17 - 18

SDM2008-153
Computational Study on Friction Behavior and Nanostructure of Diamond-like Carbon (DLC)
Takanori Kuriaki, Yusuke Morita, Tasuku Onodera, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 19 - 20

SDM2008-154
Tight-Binding Quantum Chemistry Study on Excitation Properties of Perylene with Acrylic Acid on Anatas(001) Surface
Chen Lv, Kei Ogiya, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 21 - 22

SDM2008-155
A Computational Study on Secondary Electron Emission property of Protecting Layer for Plasma Display Panels
Kazumi Serizawa, Itaru Yamashita, Hiroaki Onuma (Tohoku Univ.), Hiromi Kikuchi (Tohoku Univ./Hiroshima Univ.), Masaki Kitagaki (Hiroshima Univ.), Ai Suzuki, Sahnoun Riadh, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Del Carpio Carlos Del Carpio, Momoji Kubo (Tohoku Univ.), Hiroshi Kajiyama (Hiroshima Univ.)
pp. 23 - 24

SDM2008-156
Development of characterization/spectroscopic simulators based on ultra-accelerated quantum chemical molecular dynamics method and its application to Si semiconductors
Akira Endou, Itaru Yamashita, Kazumi Serizawa, Hiroaki Onuma, Tasuku Onodera, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 25 - 28

SDM2008-157
Electron Transport Simulation of Dye-sensitized TiO2 Electrode based on 3D Porous Structure
Kei Ogiya, Chen Lv, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 29 - 30

SDM2008-158
A Computational Chemistry Study on Structure and Carrier Transport Property of Light Emitting Materials
Itaru Yamashita, Hiroaki Onuma, Kazumi Serizawa, Ai Suzuki, Sahnoun Riadh, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ)
pp. 31 - 32

SDM2008-159
Structure Analysis of Phosphors Materials by Experiment Integrated Computational Chemistry
Hiroaki Onuma, Itaru Yamashita, Kazumi Serizawa, Ai Suzuki, Sahnoun Riadh, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 33 - 34

SDM2008-160
Development of Ultra-accelerated Quantum Chemical Molecular Dynamics Method for Ferroelectric Properties of Perovskite BaTiO3
HongJun Xiao, Takashi Hirai, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 35 - 36

SDM2008-161
The Application Property of B18H22 Implantation for Millisecond Annealing
Yoji Kawasaki, Seiichi Endo, Masashi Kitazawa, Yoshiki Maruyama, Tomohiro Yamashita, Takashi Kuroi, Hidefumi Yoshimura, Masahiro Yoneda (Renesas)
pp. 37 - 40

SDM2008-162
A study on work function modulation in PtSi alloying with Hf
Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Tech)
pp. 41 - 44

SDM2008-163
Statistical evaluation of characteristics variation and RTS noise of MOSFETs
Takafumi Fujisawa, Shigetoshi Sugawa, Syunichi Watabe, Kenichi Abe, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)
pp. 45 - 50

SDM2008-164
Impact of Fully Depleted Silicon-On-Insulator Accumualation-mode CMOS on Si(110)
Ching Foa Tye, Weitao Cheng, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 51 - 56

SDM2008-165
Correlation between Stress Induced Leakage Current and Random Telegraph Signal noise
Yuki Kumagai, Akinobu Teramoto, Kenichi Abe, Takafumi Fujisawa, Syunichi Watabe, Tomoyuki Suwa, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 57 - 62

SDM2008-166
Influence of B and P dopants on SiO2 film characteristics
Satoshi Nagashima, Hiroshi Akahori (Toshiba)
pp. 63 - 68

SDM2008-167
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.)
pp. 69 - 74

SDM2008-168
The data analysis and measurement technique of the atomic force microscopy for the atomically flat silicon surface
Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi (Tohoku Univ)
pp. 75 - 78

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan