Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2009-1
Solution preparation effect on n-type field-effect-transistor characteristics using PCBM
Kosuke Hamachi, Takeomi Morita, Shuichi Nagamatsu, Wataru Takashima (Kyushu Inst. of Tech.), Shuishiro Kuwajima (Kyoto Uni.), Keiichi Kaneto (Kyushu Inst. of Tech.)
pp. 1 - 4
SDM2009-2
Electrochemical activity of Polyaniline in high pH solution
Kazuo Tominaga, Hikaru Hashimoto, Wataru Takashima, Keiichi Kaneto (Kyushu Inst. of Tech.)
pp. 5 - 8
SDM2009-3
Investigation of SAM treatment on gate insulator in solution processed organic thin-film transistor
Yoshinori Horii (PRI, AIST/Graduate School of Eng., Tottori Univ.), Mitsuhiro Ikawa, Koichi Sakaguchi, Masayuki Chikamatsu, Yuji Yoshida, Reiko Azumi (PRI, AIST), Hiroshi Mogi (Japan Chemical Innovation Inst./Shin-Etsu Chemical), Masahiko Kitagawa, Hisatoshi Konishi (Graduate School of Eng., Tottori Univ.), Kiyoshi Yase (PRI, AIST)
pp. 9 - 14
SDM2009-4
Electrocatalytic activity of heme proteins at ITO electrodes
Yusuke Ayato, Naoki Matsuda (AIST)
pp. 15 - 18
SDM2009-5
Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange
Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
pp. 19 - 23
SDM2009-6
Crystallization and annealing of heavily doped p-type Si film and electronic properties
Takashi Noguchi, Tomoyuki Miyahira (Univ. of the Ryukyus), Toshiharu Suzuki (SEN)
pp. 25 - 28
SDM2009-7
Metal Induced Lateral Crystallization of PECVD a-Si and Its Impact on TFT Performance
Shintaro Kanoh, Sho Nagata, Gou Nakagawa, Tanemasa Asano (Kyushu Univ.)
pp. 29 - 34
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.