IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 109, Number 257

Silicon Device and Materials

Workshop Date : 2009-10-29 - 2009-10-30 / Issue Date : 2009-10-22

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Table of contents

SDM2009-117
High current drivability transistors with optimized silicides for n+- and p+-Si
Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ)
pp. 1 - 6

SDM2009-118
A study on Improvement of Thermal Stability for PtSi Alloying with Hf Utilizing Two-Step Silicidation Process
Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
pp. 7 - 10

SDM2009-119
HfN/HfON Gate Stacks by ECR Sputtering
Takahiro Sano, Takato Ohnishi, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
pp. 11 - 14

SDM2009-120
Silicon Wafer Thinning Technology for Three-Dimensional Integrated Circuit by Wet Etching
Kazuhiro Yoshikawa, Tomotsugu Ohashi, Tatsuro Yoshida, Takenao Nemoto, Tadahiro Ohmi (Tohoku Univ.)
pp. 15 - 19

SDM2009-121
Tribological Study for Low Shear Force CMP Process on Damascene Interconnects
Xun Gu, Takenao Nemoto (Tohoku Univ.), Yasa Adi Sampurno (Univ. of Arizona/Araca,Inc.), Jiang Cheng, Sian Theng (Araca,Inc.), Akinobu Teramoto (Tohoku Univ.), Ricardo Duyos Mateo, Leonard Borucki (Araca,Inc.), Yun Zhuang, Ara Philipossian (Univ. of Arizona/Araca,Inc.), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 21 - 26

SDM2009-122
Current Voltage Characteristics of Si-MESFET on SOI Substrate
Toshiyuki Abe, Yuichiro Tanushi, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito (Tohoku Univ.)
pp. 27 - 30

SDM2009-123
Statistical Analysis of Random Telegraph Signal Using a Large-Scale Array TEG with a Long Time Measurement
Takafumi Fujisawa, Kenichi Abe, Syunichi Watabe, Naoto Miyamoto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 31 - 36

SDM2009-124
An Analysis of Carrier Transfer in Conjugated Polymers by Luminescence Computational Chemistry
Itaru Yamashita, Kazumi Serizawa, Hiroaki Onuma, Ai Suzuki, Ryuji Miura, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ)
pp. 37 - 38

SDM2009-125
Computational Simulation for High Performance Protecting Layer of Plasma Displays
Kazumi Serizawa, Hiroaki Onuma (Tohoku Univ.), Hiromi Kikuchi (Tohoku Univ./Hiroshima Univ.), Kazuma Suesada, Masaki Kitagaki (Hiroshima Univ.), Itaru Yamashita, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo (Tohoku Univ.), Hiroshi Kajiyama (Hiroshima Univ.), Akira Miyamoto (Tohoku Univ.)
pp. 39 - 40

SDM2009-126
Prediction of emission peak wavelength of Eu2+-doped phosphors using quantum chemistry and QSPR method
Hiroaki Onuma, Itaru Yamashita, Kazumi Serizawa, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 41 - 42

SDM2009-127
Investigation of characteristics of pentacene-based MOSFETs structures
Young-Uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.)
pp. 43 - 46

SDM2009-128
Crystallization of Amorphous Silicon Films on Glass Substrate by Heated Gas Beam Annealing
Yuichiro Tanushi, Yosuke Kawano, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ), Naomi Mura, Kimihisa Yamakami, Yuji Furumura (Philtech Inc.), Takashi Ito (Tohoku Univ)
pp. 47 - 50

SDM2009-129
Recovery from Reactive Ion Etching Damage in SiO2 Films
Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.)
pp. 51 - 56

SDM2009-130
Low frequency noise in Si(100) and Si(110) p-channel MOSFETs
Philippe Gaubert, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)
pp. 57 - 62

SDM2009-131
A study on improvement of electrical characteristics for low temperature SiO2 film
Hidenobu Nagashima, Hiroshi Akahori (TOSHIBA)
pp. 63 - 67

SDM2009-132
Electrochemical Etching Processes of Semiconductors
Kingo Itaya, Shinichirou Kobayashi, Rui Wen, Taketoshi Minato (Tohoku Univ.)
pp. 69 - 73

SDM2009-133
Oxy-nitridation Simulation of Silicon Surface Using Antomated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method
Hideyuki Tsuboi, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 75 - 76

SDM2009-134
Study on compositional transition layers at SiO2/Si interface formed by radical oxidation
Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI)
pp. 77 - 80

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan