Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2011-37
Effect of C and Si co-doping high resistivity GaN buffer layer on AlGaN/GaN HFETs
Masayuki Fukai, Shusuke Kakizawa, Hiroshi Fushimi (New Japan Radio)
pp. 1 - 6
ED2011-38
Control of Interface Electric Charge by MIM Gate Structure on AlGaN/GaN HFETs
Yoshimichi Fukasawa, Eiji Waki, Hiroshi Fushimi (New Japan Radio)
pp. 7 - 12
ED2011-39
Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
Hong-An Shih, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST)
pp. 13 - 16
ED2011-40
Characterization of MOS interfaces and current collapse in AlGaN/GaN HEMTs
Tamotsu Hashizume, Chihoko Mizue, Yujin Hori, Masafumi Tajima, Kota Ohi (Hokkaido Univ.)
pp. 17 - 20
ED2011-41
Deposition of Nb2O5 films by fiash boiling spray CVD
Koji Tominaga (HORIBA), Masanori Trasaka, Tetsuo Shimizu (STEC), Jiro Senda (Doshisha Univ.), Kozo Ishida (HORIBA)
pp. 21 - 24
ED2011-42
Effects of surface pre-treatments for AlN sputtering and Al2O3 atomic layer depositions on GaAs(001)
Masahiro Kudo, Hong-An Shih, Masashi Akabori, Toshi-kazu Suzuki (JAIST)
pp. 25 - 30
ED2011-43
Characterization of Low-Frequency Noise in SiNx Insulator-Gate GaAs Etched Nanowire FETs
Toru Muramatsu, Kensuke Miura, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.)
pp. 31 - 34
ED2011-44
Inductively coupled plasma etching of Al-rich AlGaAs for Photonic Crystal Fabrication
Yuta Kitabayashi, Masaya Mochizuki, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.)
pp. 35 - 39
ED2011-45
Spring Characteristics of Circular Arc Shaped 3D Micro-cantilevers Fabricated Using III-V Semiconductor Strain-driven Bending Process
Hiuma Iwase, Jian Wang, Masashi Akabori, Syoji Yamada (JAIST)
pp. 41 - 44
ED2011-46
Carrier injection kinetics of P3HT/n-Si heterojunction diodes
Sho Kaneko, Naoki Oyama, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.)
pp. 45 - 49
ED2011-47
Characterization of organic solar cells made with MoO3 hole transport layers
Kazuki Yoshida, Akira Kurihara, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.)
pp. 51 - 56
ED2011-48
Study of film formability and photovoltaic properties of highly soluble thiophene oligomers
Takahiko Suzuki, Kazuki Yoshida, Akira Kurihara, Kazumasa Ota, Kazuaki Sato, Yoshihiro Ohba, Fumihiko Hirose (Yamagata Univ.)
pp. 57 - 58
ED2011-49
Highly efficient dye-sensitized solar cells by dye adsorption method with high-temperature solvent
Akinobu Ishida, Hiroki Yoshida, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ)
pp. 59 - 62
ED2011-50
Formation of a titanium oxide nanotube film on a transparent conductive oxide layer by anodization
Ryota Kojima, Mohammad Maksudur Rahman, Mehdi El Fassy Fihry, Yasuo Kimura, Michio Niwano (RIEC, Tohoku Univ.)
pp. 63 - 66
ED2011-51
Analysis of a monolithic integrated rectenna for zero bias detection by using bow-tie antenna and triple-barrier resonant tunneling diode
Masahito Nakamura, Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.)
pp. 67 - 72
ED2011-52
Identification of a nonlinear equivalent circuit in triple-barrier resonant tunneling diodes by using the particle swarm optimization method
Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Met. Univ.)
pp. 73 - 77
ED2011-53
Quantum-Corrected Monte Carlo Analysis of Strained InAs HEMTs
Jun Sato, Fumiharu Machida, Shinsuke Hara, Hiroki I. Fujishiro (TUS)
pp. 79 - 84
ED2011-54
Growth and characterization of GaSb film on Si(111) substrate using Sb template layer
Hideyuki Toyota, Akinari Okabe, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.)
pp. 85 - 89
ED2011-55
InSb MOS diodes on a Si(111) substrate grown by surface reconstruction ontrolled epitaxy
Azusa Kadoda, Tatsuya Iwasugi, Kimihiko Nakatani, Koji Nakayama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)
pp. 91 - 96
ED2011-56
Analysis of spin-polarized current using InSb/AlInSb resonant tunneling diodes
Masanari Fujita, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.)
pp. 97 - 102
ED2011-57
Sub-band structure and spin-orbit interaction analysis in two-dimensional electron gas bi-layer system in high In-content InGaAs/InAlAs hetero-structures
Masashi Akabori, Tomoyuki Katayama, Kosaku Moromoto, Hiuma Iwase, Syoji Yamada (CNMT JAIST)
pp. 103 - 108
ED2011-58
Anomalous Hall Effect in ZnSnAs2:Mn Epitaxial Film Gorwn on InP Substrates
Hiroto Oomae, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.)
pp. 109 - 112
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.