Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2012-150
Improved Thermal Conductivity by Vertical Graphene Contact Formation for Thermal TSV
Akio Kawabata, Mizuhisa Nihei, Tomo Murakam, Motonobu Sato, Naoki Yokoyama (AIST)
pp. 1 - 4
SDM2012-151
CuSn/InAu microbump induced local deformation and mechanical stress in high-density 3D-LSI
Murugesan Murugesan, Mitsumasa Koyanagi (Tohoku Univ.)
pp. 5 - 8
SDM2012-152
Smart interconnect technology using atom switch for low-power programmable Logic
Munehiro Tada, Toshitsugu Sakamoto, Makoto Miyamura, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Hiromitsu Hada (LEAP)
pp. 9 - 14
SDM2012-153
Nano-ordered Evaluation for Local Distribution of Adhesion Strength Between Cu/Dielectric in LSI Circuit
S.Kamiya, Hisashi Sato (Nagoya Inst. of Tech.), Masaki Omiya (Keio Univ.), Nobuyuki Shishido, Kozo Koiwa, Masahiro Nishida (Nagoya Inst. of Tech.), Tomoji Nakamura, Takashi Suzuki (Fujitsu Labs), Takeshi Nokuo, Toshiaki Suzuki (JEOL)
pp. 15 - 20
SDM2012-154
Wafer-level Chip Scale Package for White LED with High Thermal Dissipation
Yosuke Akimoto, Akihiro Kojima, Miyoko Shimada, Hideyuki Tomizawa, Hideto Furuyama, Susumu Obata, Kazuhito Higuchi, Yoshiaki Sugizaki, Hideki Shibata (Toshiba)
pp. 21 - 24
SDM2012-155
High Reliability Technology of Fine Pitch Re-wiring for High Density Chip Package
-- Cu Re-wiring Covering with Metal-Cap Barrier Technology --
Tsuyoshi Kanki, Junya Ikeda, Shoichi Suda, Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Labs)
pp. 25 - 30
SDM2012-156
Novel Seed Layer Formation Using Electroless Copper Deposition For High Aspect Ratio TSV
Fumihiro Inoue, Shoso Shingubara (Kansai Univ.), Harold Philipsen (IMEC)
pp. 31 - 34
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.